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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU95271%21RIV12-MSM-26220___
rdf:type
n14:Vysledek skos:Concept
dcterms:description
Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature range from 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterized by the presenc Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature range from 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterized by the presenc
dcterms:title
Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors
skos:prefLabel
Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors
skos:notation
RIV/00216305:26220/11:PU95271!RIV12-MSM-26220___
n14:predkladatel
n17:orjk%3A26220
n4:aktivita
n11:P n11:Z
n4:aktivity
P(GA102/09/1920), Z(MSM0021630503)
n4:dodaniDat
n19:2012
n4:domaciTvurceVysledku
n10:9770690 n10:5827582 n10:7899696 n10:6541763
n4:druhVysledku
n6:D
n4:duvernostUdaju
n20:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
205787
n4:idVysledku
RIV/00216305:26220/11:PU95271
n4:jazykVysledku
n5:eng
n4:klicovaSlova
ion diffusion, field crystalization, NbO
n4:klicoveSlovo
n8:NbO n8:ion%20diffusion n8:field%20crystalization
n4:kontrolniKodProRIV
[151A7FD7EAF1]
n4:mistoKonaniAkce
Nice
n4:mistoVydani
Nice, France
n4:nazevZdroje
CARTS EUROPE 2011 PROCEEDING
n4:obor
n9:JA
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
5
n4:projekt
n15:GA102%2F09%2F1920
n4:rokUplatneniVysledku
n19:2011
n4:tvurceVysledku
Kopecký, Martin Šikula, Josef Sedláková, Vlasta Navarová, Hana Zedníček, Tomáš
n4:typAkce
n21:WRD
n4:zahajeniAkce
2011-10-10+02:00
n4:zamer
n22:MSM0021630503
s:numberOfPages
9
n12:hasPublisher
Electronic Components Industry Association ECIA
n18:isbn
0-7908-0155-8
n16:organizacniJednotka
26220