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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU93530%21RIV12-MSM-26220___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction. We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.
dcterms:title
Influence of laser cutting on p-n junction behavior of solar cell Influence of laser cutting on p-n junction behavior of solar cell
skos:prefLabel
Influence of laser cutting on p-n junction behavior of solar cell Influence of laser cutting on p-n junction behavior of solar cell
skos:notation
RIV/00216305:26220/11:PU93530!RIV12-MSM-26220___
n10:predkladatel
n13:orjk%3A26220
n3:aktivita
n19:P
n3:aktivity
P(GAP102/11/0995), P(LH11060)
n3:cisloPeriodika
2156
n3:dodaniDat
n12:2012
n3:domaciTvurceVysledku
n7:2108585 n7:6493645 n7:2967677
n3:druhVysledku
n18:J
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
204445
n3:idVysledku
RIV/00216305:26220/11:PU93530
n3:jazykVysledku
n16:eng
n3:klicovaSlova
pn junction, laser cutting, solar cell, efficiency
n3:klicoveSlovo
n4:efficiency n4:pn%20junction n4:laser%20cutting n4:solar%20cell
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[ADE52CF9F6DF]
n3:nazevZdroje
VDI Berichte
n3:obor
n5:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n17:LH11060 n17:GAP102%2F11%2F0995
n3:rokUplatneniVysledku
n12:2011
n3:svazekPeriodika
2156
n3:tvurceVysledku
Tománek, Pavel Grmela, Lubomír Škarvada, Pavel
s:issn
0083-5560
s:numberOfPages
6
n11:organizacniJednotka
26220