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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU93448%21RIV12-MSM-26220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
The paper has focused on analysis of noise measurement in Ta2O5 insulating films. Tan-talum pent-oxide thin films are used as dielectric layers for capacitors. Tantalum capacitors show high relative permittivity, low leakage current density and high reliability. The capacitor is here presented as a MIS structure where cathode is formed by manganese-dioxide (with semiconductor conductivity) and anode is formed by tantalum (with metal conductivity). Capacitor is operated in normal mode when the anode is positive and in reverse mode when the cathode is positive. The measurement set-up allows the low frequency noise and capacity measurements in the wide tem-perature range. The Ta2O5 films of the thickness about 28 nm were examined. The current noise spectral density was analyzed for the temperature range from 10 to 400 K. GR noise and 1/fa noise are observed in the low frequency region with exponent a varying between 1 and 1.5. From the measurement of sample capacity for different temperatures it follows, The paper has focused on analysis of noise measurement in Ta2O5 insulating films. Tan-talum pent-oxide thin films are used as dielectric layers for capacitors. Tantalum capacitors show high relative permittivity, low leakage current density and high reliability. The capacitor is here presented as a MIS structure where cathode is formed by manganese-dioxide (with semiconductor conductivity) and anode is formed by tantalum (with metal conductivity). Capacitor is operated in normal mode when the anode is positive and in reverse mode when the cathode is positive. The measurement set-up allows the low frequency noise and capacity measurements in the wide tem-perature range. The Ta2O5 films of the thickness about 28 nm were examined. The current noise spectral density was analyzed for the temperature range from 10 to 400 K. GR noise and 1/fa noise are observed in the low frequency region with exponent a varying between 1 and 1.5. From the measurement of sample capacity for different temperatures it follows,
dcterms:title
TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS
skos:prefLabel
TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS
skos:notation
RIV/00216305:26220/11:PU93448!RIV12-MSM-26220___
n16:predkladatel
n18:orjk%3A26220
n3:aktivita
n17:Z n17:P
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n15:2012
n3:domaciTvurceVysledku
n10:7899696
n3:druhVysledku
n23:D
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n7:predkladatel
n3:idSjednocenehoVysledku
234593
n3:idVysledku
RIV/00216305:26220/11:PU93448
n3:jazykVysledku
n8:eng
n3:klicovaSlova
tantalum, 1/f noise, Ta2O5, GR noise
n3:klicoveSlovo
n5:GR%20noise n5:Ta2O5 n5:tantalum n5:1%2Ff%20noise
n3:kontrolniKodProRIV
[E029FCEDF797]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
nam. Republiky 15 614 00 Brno
n3:nazevZdroje
PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
1
n3:projekt
n12:GA102%2F09%2F1920 n12:GD102%2F09%2FH074
n3:rokUplatneniVysledku
n15:2011
n3:tvurceVysledku
Kopecký, Martin
n3:typAkce
n4:CST
n3:zahajeniAkce
2011-04-28+02:00
n3:zamer
n19:MSM0021630503
s:numberOfPages
4
n22:hasPublisher
NOVPRESS s.r.o.
n21:isbn
978-80-214-4079-1
n20:organizacniJednotka
26220