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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU93447%21RIV12-MSM-26220___
rdf:type
n5:Vysledek skos:Concept
dcterms:description
The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temperature range bell The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temperature range bell
dcterms:title
NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE
skos:prefLabel
NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE
skos:notation
RIV/00216305:26220/11:PU93447!RIV12-MSM-26220___
n5:predkladatel
n21:orjk%3A26220
n3:aktivita
n7:P n7:Z
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n13:2012
n3:domaciTvurceVysledku
n9:7899696 n9:5258162 n9:6209947
n3:druhVysledku
n15:D
n3:duvernostUdaju
n23:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
216129
n3:idVysledku
RIV/00216305:26220/11:PU93447
n3:jazykVysledku
n10:eng
n3:klicovaSlova
Noise, Electron Transport, Nb2O5
n3:klicoveSlovo
n14:Noise n14:Electron%20Transport n14:Nb2O5
n3:kontrolniKodProRIV
[1485AECF1EE6]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Nám. Republiky 614 00 Brno
n3:nazevZdroje
Proc. IMAPS CS Int. Conf. Electronic Devices and Systems EDS 2011
n3:obor
n20:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
85
n3:projekt
n17:GA102%2F09%2F1920 n17:GD102%2F09%2FH074
n3:rokUplatneniVysledku
n13:2011
n3:tvurceVysledku
Sedláková, Vlasta Trčka, Tomáš Kopecký, Martin Chvátal, Miloš
n3:typAkce
n18:WRD
n3:zahajeniAkce
2011-06-22+02:00
n3:zamer
n4:MSM0021630503
s:numberOfPages
279
n16:hasPublisher
NOVPRESS s.r.o.
n6:isbn
978-80-214-4303-7
n22:organizacniJednotka
26220