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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU92666%21RIV12-MSM-26220___
rdf:type
n4:Vysledek skos:Concept
dcterms:description
Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique. Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.
dcterms:title
Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell
skos:prefLabel
Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell
skos:notation
RIV/00216305:26220/11:PU92666!RIV12-MSM-26220___
n4:predkladatel
n20:orjk%3A26220
n5:aktivita
n17:Z n17:P
n5:aktivity
P(GAP102/11/0995), Z(MSM0021630503)
n5:cisloPeriodika
2
n5:dodaniDat
n11:2012
n5:domaciTvurceVysledku
n7:6493645 n7:2967677 n7:3673332 n7:2108585
n5:druhVysledku
n19:J
n5:duvernostUdaju
n13:S
n5:entitaPredkladatele
n15:predkladatel
n5:idSjednocenehoVysledku
215246
n5:idVysledku
RIV/00216305:26220/11:PU92666
n5:jazykVysledku
n9:eng
n5:klicovaSlova
defect, detection, loclaization, solar cell, near-field
n5:klicoveSlovo
n6:detection n6:near-field n6:loclaization n6:solar%20cell n6:defect
n5:kodStatuVydavatele
IN - Indická republika
n5:kontrolniKodProRIV
[9E4D0E7FCF5D]
n5:nazevZdroje
Inventi Rapid: Energy & Power
n5:obor
n18:JA
n5:pocetDomacichTvurcuVysledku
4
n5:pocetTvurcuVysledku
4
n5:projekt
n12:GAP102%2F11%2F0995
n5:rokUplatneniVysledku
n11:2011
n5:svazekPeriodika
2011
n5:tvurceVysledku
Macků, Robert Škarvada, Pavel Tománek, Pavel Grmela, Lubomír
n5:zamer
n8:MSM0021630503
s:issn
2229-7774
s:numberOfPages
4
n3:organizacniJednotka
26220