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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU113730%21RIV15-MSM-26220___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
The effects of alpha irradiation on the change in threshold voltage have been measured for standard RADFET die housed in a custom package. The intended application is for monitoring process stability in an ion implantation process. The results show that these devices exhibit good promise for use as a routine dosimeter for periodic comparison of the stability of the process. The effects of alpha irradiation on the change in threshold voltage have been measured for standard RADFET die housed in a custom package. The intended application is for monitoring process stability in an ion implantation process. The results show that these devices exhibit good promise for use as a routine dosimeter for periodic comparison of the stability of the process.
dcterms:title
Using RADFETs for alpha radiation dosimetry Using RADFETs for alpha radiation dosimetry
skos:prefLabel
Using RADFETs for alpha radiation dosimetry Using RADFETs for alpha radiation dosimetry
skos:notation
RIV/00216305:26220/11:PU113730!RIV15-MSM-26220___
n4:aktivita
n17:S
n4:aktivity
S
n4:dodaniDat
n9:2015
n4:domaciTvurceVysledku
n19:5249864
n4:druhVysledku
n16:D
n4:duvernostUdaju
n6:S
n4:entitaPredkladatele
n14:predkladatel
n4:idSjednocenehoVysledku
237404
n4:idVysledku
RIV/00216305:26220/11:PU113730
n4:jazykVysledku
n15:eng
n4:klicovaSlova
alpha radiation, RADFET, threshold voltage, ion implantation, power semiconductors
n4:klicoveSlovo
n5:threshold%20voltage n5:RADFET n5:alpha%20radiation n5:power%20semiconductors n5:ion%20implantation
n4:kontrolniKodProRIV
[C5A88AB3AF86]
n4:mistoKonaniAkce
Sevila
n4:mistoVydani
Sevilla, Spain
n4:nazevZdroje
Proceedings, 12th European Conference on Radiation and its Effects on Components and Systems (RADECS 2011) : Sevilla, Spain, September 19-23, 2011
n4:obor
n7:JA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
3
n4:rokUplatneniVysledku
n9:2011
n4:tvurceVysledku
Sharp, Richard Holmes-Siedle, Andrew Hofman, Jiří
n4:typAkce
n11:WRD
n4:zahajeniAkce
2011-09-19+02:00
s:numberOfPages
4
n18:hasPublisher
IEEE
n3:isbn
9781457705854
n13:organizacniJednotka
26220