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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU90363%21RIV11-GA0-26220___
rdf:type
skos:Concept n22:Vysledek
dcterms:description
The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited by the field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s. Activation energ The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited by the field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s. Activation energ
dcterms:title
Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability
skos:prefLabel
Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability
skos:notation
RIV/00216305:26220/10:PU90363!RIV11-GA0-26220___
n3:aktivita
n16:P n16:Z
n3:aktivity
P(GA102/09/1920), Z(MSM0021630503)
n3:dodaniDat
n5:2011
n3:domaciTvurceVysledku
n6:8995923 n6:5827582 n6:6541763 n6:6209947 n6:9770690 n6:1629786
n3:druhVysledku
n11:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
291810
n3:idVysledku
RIV/00216305:26220/10:PU90363
n3:jazykVysledku
n14:eng
n3:klicovaSlova
Tantalum, Niobium, Oxide, Crystallization, Leakage Current Kinetics, Reliability
n3:klicoveSlovo
n9:Reliability n9:Leakage%20Current%20Kinetics n9:Crystallization n9:Oxide n9:Tantalum n9:Niobium
n3:kontrolniKodProRIV
[F655ED802EEB]
n3:mistoKonaniAkce
Niš
n3:mistoVydani
Niš
n3:nazevZdroje
27th International Conference on Microelectronics MIEL 2010
n3:obor
n17:JA
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
6
n3:projekt
n19:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n5:2010
n3:tvurceVysledku
Šikula, Josef Sedláková, Vlasta Navarová, Hana Chvátal, Miloš Zedníček, Tomáš Majzner, Jiří
n3:typAkce
n21:WRD
n3:zahajeniAkce
2010-05-16+02:00
n3:zamer
n10:MSM0021630503
s:numberOfPages
4
n8:hasPublisher
MIEL
n18:isbn
978-1-4244-7200-0
n12:organizacniJednotka
26220