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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU90286%21RIV11-GA0-26220___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
The paper will present the modeling of charge transport in Ta2O5 nanolayers together with experimental verification of the model. MIS structure model for tantalum capacitors with conducting polymer cathode will be described on the base of the leakage current analysis. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 10-4A/m2 for the electric field 100 MV/m. Dominant mechanism of charge carrier transport is ohmic conduction for the low electric field, while Poole-Frenkel mechanism becomes dominant for electric fields in the range 100 to 200 MV/m. Tunneling current becomes dominant for the electric field higher than 200 MV/m. Ohmic current component and Poole-Frenkel current component are thermally activated, while the tunnelling current component is temperature independent. We have observed that for temperatures above 250 K the leakage current is given predominantly by the ohmic and Poole-Frenkel mechanism. For temperatures bel The paper will present the modeling of charge transport in Ta2O5 nanolayers together with experimental verification of the model. MIS structure model for tantalum capacitors with conducting polymer cathode will be described on the base of the leakage current analysis. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 10-4A/m2 for the electric field 100 MV/m. Dominant mechanism of charge carrier transport is ohmic conduction for the low electric field, while Poole-Frenkel mechanism becomes dominant for electric fields in the range 100 to 200 MV/m. Tunneling current becomes dominant for the electric field higher than 200 MV/m. Ohmic current component and Poole-Frenkel current component are thermally activated, while the tunnelling current component is temperature independent. We have observed that for temperatures above 250 K the leakage current is given predominantly by the ohmic and Poole-Frenkel mechanism. For temperatures bel
dcterms:title
Charge Carrier Transport in Ta2O5 Oxide Nanolayers Charge Carrier Transport in Ta2O5 Oxide Nanolayers
skos:prefLabel
Charge Carrier Transport in Ta2O5 Oxide Nanolayers Charge Carrier Transport in Ta2O5 Oxide Nanolayers
skos:notation
RIV/00216305:26220/10:PU90286!RIV11-GA0-26220___
n3:aktivita
n4:P n4:Z
n3:aktivity
P(GA102/09/1920), Z(MSM0021630503)
n3:cisloPeriodika
3
n3:dodaniDat
n7:2011
n3:domaciTvurceVysledku
n8:7899696 n8:6541763 n8:6209947
n3:druhVysledku
n6:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
250501
n3:idVysledku
RIV/00216305:26220/10:PU90286
n3:jazykVysledku
n11:eng
n3:klicovaSlova
MIS, Ta2O5, Tantalum, Nanolayers
n3:klicoveSlovo
n17:MIS n17:Tantalum n17:Nanolayers n17:Ta2O5
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[D70F7AAF7688]
n3:nazevZdroje
ElectroScope - http://www.electroscope.zcu.cz
n3:obor
n13:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n16:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n7:2010
n3:svazekPeriodika
2010
n3:tvurceVysledku
Sedláková, Vlasta Kopecký, Martin Chvátal, Miloš
n3:zamer
n9:MSM0021630503
s:issn
1802-4564
s:numberOfPages
4
n12:organizacniJednotka
26220