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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU90284%21RIV11-GA0-26220___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position. The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position.
dcterms:title
Model for RTS noise in submicron mosfets Model for RTS noise in submicron mosfets
skos:prefLabel
Model for RTS noise in submicron mosfets Model for RTS noise in submicron mosfets
skos:notation
RIV/00216305:26220/10:PU90284!RIV11-GA0-26220___
n3:aktivita
n11:Z n11:P
n3:aktivity
P(GA102/08/0260), P(GA102/09/1920), Z(MSM0021630503)
n3:dodaniDat
n17:2011
n3:domaciTvurceVysledku
n4:6541763 n4:6209947 n4:7526938 n4:9770690 n4:7899696 n4:5827582
n3:druhVysledku
n19:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
271781
n3:idVysledku
RIV/00216305:26220/10:PU90284
n3:jazykVysledku
n16:eng
n3:klicovaSlova
GRT model , MOSFET , RTS noise , capture time constant , emission time constant
n3:klicoveSlovo
n7:MOSFET%20 n7:emission%20time%20constant n7:RTS%20noise%20 n7:GRT%20model%20 n7:capture%20time%20constant%20
n3:kontrolniKodProRIV
[7ED1A7A34686]
n3:mistoKonaniAkce
Gdańsk
n3:mistoVydani
Gdańsk
n3:nazevZdroje
Model for RTS noise in submicron MOSFETS
n3:obor
n22:JA
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
6
n3:projekt
n5:GA102%2F09%2F1920 n5:GA102%2F08%2F0260
n3:rokUplatneniVysledku
n17:2010
n3:tvurceVysledku
Kopecký, Martin Chvátal, Miloš Navarová, Hana Šikula, Josef Sedláková, Vlasta Pavelka, Jan
n3:typAkce
n9:WRD
n3:zahajeniAkce
2010-06-28+02:00
n3:zamer
n18:MSM0021630503
s:numberOfPages
4
n6:hasPublisher
Information technologies volume 18
n13:isbn
978-83-60779-02-6
n20:organizacniJednotka
26220