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Namespace Prefixes

PrefixIRI
n18http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n15http://purl.org/net/nknouf/ns/bibtex#
n13http://localhost/temp/predkladatel/
n11http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n17http://linked.opendata.cz/ontology/domain/vavai/
n21https://schema.org/
n6http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n9http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n16http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n12http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F10%3APU90266%21RIV11-GA0-26220___/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n5http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU90266%21RIV11-GA0-26220___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position. The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position. The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position.
dcterms:title
Model for rts noise in submicron mosfets Model for rts noise in submicron mosfets Model for rts noise in submicron mosfets
skos:prefLabel
Model for rts noise in submicron mosfets Model for rts noise in submicron mosfets Model for rts noise in submicron mosfets
skos:notation
RIV/00216305:26220/10:PU90266!RIV11-GA0-26220___
n3:aktivita
n20:Z n20:P
n3:aktivity
P(GA102/08/0260), P(GA102/09/1920), Z(MSM0021630503)
n3:dodaniDat
n5:2011
n3:domaciTvurceVysledku
n4:7899696 n4:5827582 n4:6541763 n4:6209947 n4:7526938 n4:9770690
n3:druhVysledku
n10:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
271780
n3:idVysledku
RIV/00216305:26220/10:PU90266
n3:jazykVysledku
n16:cze
n3:klicovaSlova
GRT model , MOSFET , RTS noise , capture time constant , emission time constant
n3:klicoveSlovo
n9:GRT%20model%20 n9:capture%20time%20constant%20 n9:MOSFET%20 n9:emission%20time%20constant n9:RTS%20noise%20
n3:kontrolniKodProRIV
[55F0F0AE4DD7]
n3:mistoKonaniAkce
Gdańsk
n3:mistoVydani
Neuveden
n3:nazevZdroje
Model for RTS noise in submicron MOSFETS
n3:obor
n14:JA
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
6
n3:projekt
n11:GA102%2F08%2F0260 n11:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n5:2010
n3:tvurceVysledku
Šikula, Josef Sedláková, Vlasta Pavelka, Jan Kopecký, Martin Chvátal, Miloš Navarová, Hana
n3:typAkce
n18:WRD
n3:zahajeniAkce
2010-06-28+02:00
n3:zamer
n6:MSM0021630503
s:numberOfPages
4
n15:hasPublisher
IEEE Explore Digital Library
n21:isbn
978-1-4244-8182-8
n13:organizacniJednotka
26220