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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU89316%21RIV11-GA0-26220___
rdf:type
skos:Concept n20:Vysledek
dcterms:description
The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-3), rise during The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-3), rise during
dcterms:title
Leakage Current and Quantum Effects in Tantalum Capacitors Leakage Current and Quantum Effects in Tantalum Capacitors
skos:prefLabel
Leakage Current and Quantum Effects in Tantalum Capacitors Leakage Current and Quantum Effects in Tantalum Capacitors
skos:notation
RIV/00216305:26220/10:PU89316!RIV11-GA0-26220___
n3:aktivita
n11:Z n11:P
n3:aktivity
P(GA102/09/1920), P(KAN401770651), Z(MSM0021630503)
n3:dodaniDat
n13:2011
n3:domaciTvurceVysledku
n8:5827582 n8:8995923 n8:7899696 n8:6209947 n8:5801737 n8:9770690 n8:6541763 n8:6647901
n3:druhVysledku
n4:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
268069
n3:idVysledku
RIV/00216305:26220/10:PU89316
n3:jazykVysledku
n21:eng
n3:klicovaSlova
Leakage Current, Quantum Effects, Tantalum, Capacitors, Ta
n3:klicoveSlovo
n12:Leakage%20Current n12:Capacitors n12:Quantum%20Effects n12:Ta n12:Tantalum
n3:kontrolniKodProRIV
[1C6D92E991B9]
n3:mistoKonaniAkce
Munich
n3:mistoVydani
Munich, Germany
n3:nazevZdroje
CARTS Europe 2010
n3:obor
n22:JA
n3:pocetDomacichTvurcuVysledku
8
n3:pocetTvurcuVysledku
8
n3:projekt
n5:GA102%2F09%2F1920 n5:KAN401770651
n3:rokUplatneniVysledku
n13:2010
n3:tvurceVysledku
Zedníček, Tomáš Kopecký, Martin Biler, Martin Chvátal, Miloš Nešpůrek, Stanislav Navarová, Hana Sedláková, Vlasta Šikula, Josef
n3:typAkce
n19:WRD
n3:zahajeniAkce
2010-11-10+01:00
n3:zamer
n10:MSM0021630503
s:numberOfPages
10
n16:hasPublisher
Electronic Components Association
n18:isbn
0-7908-0151-5
n17:organizacniJednotka
26220