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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU88547%21RIV11-GA0-26220___
rdf:type
n12:Vysledek skos:Concept
dcterms:description
This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capture time constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capture time constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha
dcterms:title
Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components
skos:prefLabel
Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components
skos:notation
RIV/00216305:26220/10:PU88547!RIV11-GA0-26220___
n3:aktivita
n13:Z n13:P
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n21:2011
n3:domaciTvurceVysledku
n6:7899696 n6:6541763 n6:7526938 n6:6209947
n3:druhVysledku
n20:D
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
253912
n3:idVysledku
RIV/00216305:26220/10:PU88547
n3:jazykVysledku
n19:eng
n3:klicovaSlova
MOSFET, charge transport, RTS noise, time capture
n3:klicoveSlovo
n5:MOSFET n5:charge%20transport n5:time%20capture n5:RTS%20noise
n3:kontrolniKodProRIV
[732D87D9284D]
n3:mistoKonaniAkce
West Lafayette, IN
n3:mistoVydani
Clearance Center 222 Rosewood Drive Danvers MA 0
n3:nazevZdroje
2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Volume 1
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n11:GD102%2F09%2FH074 n11:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n21:2010
n3:tvurceVysledku
Pavelka, Jan Chvátal, Miloš Kopecký, Martin Sedláková, Vlasta
n3:typAkce
n18:WRD
n3:zahajeniAkce
2010-10-17+02:00
n3:zamer
n8:MSM0021630503
s:issn
0084-9162
s:numberOfPages
4
n7:hasPublisher
IEEE
n10:organizacniJednotka
26220