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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU88344%21RIV11-GA0-26220___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the leakage current in The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the leakage current in
dcterms:title
Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
skos:prefLabel
Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
skos:notation
RIV/00216305:26220/10:PU88344!RIV11-GA0-26220___
n3:aktivita
n6:Z n6:P
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n14:2011
n3:domaciTvurceVysledku
n10:7899696 n10:6209947 n10:6541763 n10:9770690
n3:druhVysledku
n18:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n11:predkladatel
n3:idSjednocenehoVysledku
256761
n3:idVysledku
RIV/00216305:26220/10:PU88344
n3:jazykVysledku
n13:eng
n3:klicovaSlova
Transport, Electron, Low temperature, Tantalum, Capacitors, Nanolayers
n3:klicoveSlovo
n9:Tantalum n9:Electron n9:Low%20temperature n9:Transport n9:Capacitors n9:Nanolayers
n3:kontrolniKodProRIV
[B5AE0DBF8B7F]
n3:mistoKonaniAkce
Berlin
n3:mistoVydani
Berlin
n3:nazevZdroje
Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
n3:obor
n8:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n20:GD102%2F09%2FH074 n20:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n14:2010
n3:tvurceVysledku
Chvátal, Miloš Kopecký, Martin Šikula, Josef Sedláková, Vlasta
n3:typAkce
n12:WRD
n3:zahajeniAkce
2010-09-13+02:00
n3:zamer
n15:MSM0021630503
s:numberOfPages
5
n21:hasPublisher
IEEE Explore Digital Library
n22:isbn
978-1-4244-8555-0
n16:organizacniJednotka
26220