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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU86946%21RIV11-GA0-26220___
rdf:type
skos:Concept n22:Vysledek
dcterms:description
The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis. The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis.
dcterms:title
Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors
skos:prefLabel
Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors
skos:notation
RIV/00216305:26220/10:PU86946!RIV11-GA0-26220___
n3:aktivita
n21:P n21:Z
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n11:2011
n3:domaciTvurceVysledku
n9:6209947 n9:7899696 n9:6541763
n3:druhVysledku
n18:D
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
256759
n3:idVysledku
RIV/00216305:26220/10:PU86946
n3:jazykVysledku
n15:eng
n3:klicovaSlova
Tantalum Capacitor, Thin Film, Leakage current, Ta205
n3:klicoveSlovo
n8:Leakage%20current n8:Tantalum%20Capacitor n8:Ta205 n8:Thin%20Film
n3:kontrolniKodProRIV
[736774D14B77]
n3:mistoKonaniAkce
Warsaw
n3:mistoVydani
Koszykowa 75 00 662 Warsaw Poland
n3:nazevZdroje
Polymer Electronics and Nanotechnologies: towards System Integration
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n4:GD102%2F09%2FH074 n4:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n11:2010
n3:tvurceVysledku
Kopecký, Martin Sedláková, Vlasta Chvátal, Miloš
n3:typAkce
n14:EUR
n3:zahajeniAkce
2010-05-12+02:00
n3:zamer
n20:MSM0021630503
s:numberOfPages
3
n10:hasPublisher
Piotr Firek, Ryszard Kisiel
n12:isbn
978-83-7207-874-2
n13:organizacniJednotka
26220