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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU86945%21RIV11-GA0-26220___
rdf:type
n3:Vysledek skos:Concept
dcterms:description
Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2 MV/cm at temperature lower then 200 K. Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2 MV/cm at temperature lower then 200 K.
dcterms:title
ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS
skos:prefLabel
ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS
skos:notation
RIV/00216305:26220/10:PU86945!RIV11-GA0-26220___
n4:aktivita
n11:Z n11:P
n4:aktivity
P(GA102/09/1920), Z(MSM0021630503)
n4:dodaniDat
n5:2011
n4:domaciTvurceVysledku
n12:7899696
n4:druhVysledku
n17:D
n4:duvernostUdaju
n8:S
n4:entitaPredkladatele
n14:predkladatel
n4:idSjednocenehoVysledku
256760
n4:idVysledku
RIV/00216305:26220/10:PU86945
n4:jazykVysledku
n20:eng
n4:klicovaSlova
Tantalum Capacitor, Thin Film, Leakage current, Ta205
n4:klicoveSlovo
n6:Ta205 n6:Tantalum%20Capacitor n6:Leakage%20current n6:Thin%20Film
n4:kontrolniKodProRIV
[DA6980FBF266]
n4:mistoKonaniAkce
FEKT VUT v Brně
n4:mistoVydani
nam. Republiky 15 614 00 Brno
n4:nazevZdroje
PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010
n4:obor
n22:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
1
n4:projekt
n13:GA102%2F09%2F1920
n4:rokUplatneniVysledku
n5:2010
n4:tvurceVysledku
Kopecký, Martin
n4:typAkce
n15:CST
n4:zahajeniAkce
2010-04-29+02:00
n4:zamer
n16:MSM0021630503
s:numberOfPages
4
n19:hasPublisher
NOVPRESS s.r.o.
n18:isbn
978-80-214-4079-1
n10:organizacniJednotka
26220