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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU86944%21RIV11-GA0-26220___
rdf:type
skos:Concept n21:Vysledek
dcterms:description
We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature. We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.
dcterms:title
Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs
skos:prefLabel
Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs
skos:notation
RIV/00216305:26220/10:PU86944!RIV11-GA0-26220___
n3:aktivita
n5:Z n5:P
n3:aktivity
P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n7:2011
n3:domaciTvurceVysledku
n6:6209947 n6:7526938 n6:9770690
n3:druhVysledku
n18:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
256749
n3:idVysledku
RIV/00216305:26220/10:PU86944
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Electron Density, RTS Noise, 1/f noise, Cryogenic Measurement, MOSFET
n3:klicoveSlovo
n15:MOSFET n15:1%2Ff%20noise n15:Cryogenic%20Measurement n15:Electron%20Density n15:RTS%20Noise
n3:kontrolniKodProRIV
[29F624B8B640]
n3:mistoKonaniAkce
Kyoto
n3:mistoVydani
Koszykowa 75 00 662 Warsaw Poland
n3:nazevZdroje
Polymer Electronics and Nanotechnologies: towards System Integration
n3:obor
n20:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n13:GD102%2F09%2FH074
n3:rokUplatneniVysledku
n7:2010
n3:tvurceVysledku
Pavelka, Jan Šikula, Josef Chvátal, Miloš
n3:typAkce
n22:WRD
n3:zahajeniAkce
2010-08-01+02:00
n3:zamer
n19:MSM0021630503
s:numberOfPages
2
n10:hasPublisher
Piotr Firek, Ryszard Kisiel
n9:isbn
978-83-7207-874-2
n12:organizacniJednotka
26220