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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F10%3APU83905%21RIV11-GA0-26220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique. Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.
dcterms:title
Detection and localization of defects in monocrystalline silicon solar cell Detection and localization of defects in monocrystalline silicon solar cell
skos:prefLabel
Detection and localization of defects in monocrystalline silicon solar cell Detection and localization of defects in monocrystalline silicon solar cell
skos:notation
RIV/00216305:26220/10:PU83905!RIV11-GA0-26220___
n3:aktivita
n4:P n4:Z
n3:aktivity
P(GA102/08/1474), Z(MSM0021630503)
n3:cisloPeriodika
805325
n3:dodaniDat
n6:2011
n3:domaciTvurceVysledku
n7:3673332 n7:6493645 n7:2108585 n7:2967677
n3:druhVysledku
n18:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
253628
n3:idVysledku
RIV/00216305:26220/10:PU83905
n3:jazykVysledku
n8:eng
n3:klicovaSlova
Defect, optoelectronic device, solar cells, near-field
n3:klicoveSlovo
n14:Defect n14:optoelectronic%20device n14:near-field n14:solar%20cells
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[105A6C1DC582]
n3:nazevZdroje
Advances in Optical Technologies
n3:obor
n10:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n11:GA102%2F08%2F1474
n3:rokUplatneniVysledku
n6:2010
n3:svazekPeriodika
2010
n3:tvurceVysledku
Tománek, Pavel Škarvada, Pavel Grmela, Lubomír Macků, Robert
n3:zamer
n9:MSM0021630503
s:issn
1687-6393
s:numberOfPages
5
n13:organizacniJednotka
26220