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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F09%3APU83429%21RIV10-MSM-26220___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode. Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.
dcterms:title
Measurements and Theoretical Approximations of VA Characteristics MOSFETs Measurements and Theoretical Approximations of VA Characteristics MOSFETs
skos:prefLabel
Measurements and Theoretical Approximations of VA Characteristics MOSFETs Measurements and Theoretical Approximations of VA Characteristics MOSFETs
skos:notation
RIV/00216305:26220/09:PU83429!RIV10-MSM-26220___
n3:aktivita
n10:P n10:Z
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:cisloPeriodika
10
n3:dodaniDat
n8:2010
n3:domaciTvurceVysledku
n6:6209947 n6:6541763 n6:4427378 n6:9770690
n3:druhVysledku
n13:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
325093
n3:idVysledku
RIV/00216305:26220/09:PU83429
n3:jazykVysledku
n4:eng
n3:klicovaSlova
VA characteristic, MOSFET, electron density, diffusion current, drift current
n3:klicoveSlovo
n12:electron%20density n12:diffusion%20current n12:MOSFET n12:VA%20characteristic n12:drift%20current
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[93D7FEB6C0A5]
n3:nazevZdroje
Jemná mechanika a optika
n3:obor
n19:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n17:GD102%2F09%2FH074 n17:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n8:2009
n3:svazekPeriodika
54
n3:tvurceVysledku
Knápek, Alexandr Chvátal, Miloš Šikula, Josef Sedláková, Vlasta
n3:zamer
n15:MSM0021630503
s:issn
0447-6441
s:numberOfPages
2
n16:organizacniJednotka
26220