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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F09%3APU82379%21RIV10-MSM-26220___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work. This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.
dcterms:title
Near-field photoelectric measurement of Si solar cells Near-field photoelectric measurement of Si solar cells
skos:prefLabel
Near-field photoelectric measurement of Si solar cells Near-field photoelectric measurement of Si solar cells
skos:notation
RIV/00216305:26220/09:PU82379!RIV10-MSM-26220___
n3:aktivita
n17:Z n17:P
n3:aktivity
P(GA102/08/1474), Z(MSM0021630503)
n3:dodaniDat
n6:2010
n3:domaciTvurceVysledku
n4:6493645 n4:2967677 n4:3673332
n3:druhVysledku
n22:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
328808
n3:idVysledku
RIV/00216305:26220/09:PU82379
n3:jazykVysledku
n7:eng
n3:klicovaSlova
Scanning Near-field Optical Microscope, Silicon Solar Cell, Photoelectric Properties
n3:klicoveSlovo
n5:Photoelectric%20Properties n5:Scanning%20Near-field%20Optical%20Microscope n5:Silicon%20Solar%20Cell
n3:kontrolniKodProRIV
[C7D3D57EFB97]
n3:mistoKonaniAkce
Hamburg
n3:mistoVydani
Hamburg, Germany
n3:nazevZdroje
24th European Photovoltaic Solar Energy Conference Proceedings
n3:obor
n21:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n10:GA102%2F08%2F1474
n3:rokUplatneniVysledku
n6:2009
n3:tvurceVysledku
Macků, Robert Tománek, Pavel Škarvada, Pavel
n3:typAkce
n13:EUR
n3:zahajeniAkce
2009-09-20+02:00
n3:zamer
n18:MSM0021630503
s:numberOfPages
4
n11:hasPublisher
Neuveden
n20:isbn
3-936338-25-6
n14:organizacniJednotka
26220