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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F09%3APU82319%21RIV10-MSM-26220___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model wi This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model wi
dcterms:title
Innovative electric model of n+p silicon solar cells Innovative electric model of n+p silicon solar cells
skos:prefLabel
Innovative electric model of n+p silicon solar cells Innovative electric model of n+p silicon solar cells
skos:notation
RIV/00216305:26220/09:PU82319!RIV10-MSM-26220___
n4:aktivita
n19:Z n19:P
n4:aktivity
P(GD102/09/H074), Z(MSM0021630503)
n4:dodaniDat
n7:2010
n4:domaciTvurceVysledku
n13:2967677 n13:3502465 n13:3673332
n4:druhVysledku
n6:D
n4:duvernostUdaju
n14:S
n4:entitaPredkladatele
n11:predkladatel
n4:idSjednocenehoVysledku
319624
n4:idVysledku
RIV/00216305:26220/09:PU82319
n4:jazykVysledku
n5:eng
n4:klicovaSlova
Silicon Solar Cell, Non-destructive Testing, Electric model
n4:klicoveSlovo
n10:Non-destructive%20Testing n10:Silicon%20Solar%20Cell n10:Electric%20model
n4:kontrolniKodProRIV
[6DE7106B2FC7]
n4:mistoKonaniAkce
Hamburg
n4:mistoVydani
Neuveden
n4:nazevZdroje
Proceedings of 24rd European Photovoltaic Solar Energy Conference
n4:obor
n22:BM
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
3
n4:projekt
n8:GD102%2F09%2FH074
n4:rokUplatneniVysledku
n7:2009
n4:tvurceVysledku
Macků, Robert Škarvada, Pavel Koktavý, Pavel
n4:typAkce
n15:EUR
n4:zahajeniAkce
2009-09-20+02:00
n4:zamer
n20:MSM0021630503
s:numberOfPages
4
n12:hasPublisher
WIP-Renewable Energies
n21:isbn
3-936338-24-8
n16:organizacniJednotka
26220