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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F09%3APU81999%21RIV10-MSM-26220___
rdf:type
n17:Vysledek skos:Concept
dcterms:description
Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode. Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode. Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.
dcterms:title
IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS
skos:prefLabel
IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS
skos:notation
RIV/00216305:26220/09:PU81999!RIV10-MSM-26220___
n4:aktivita
n16:Z n16:P
n4:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n4:dodaniDat
n12:2010
n4:domaciTvurceVysledku
n14:9770690 n14:6541763 n14:6209947
n4:druhVysledku
n7:D
n4:duvernostUdaju
n15:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
318817
n4:idVysledku
RIV/00216305:26220/09:PU81999
n4:jazykVysledku
n9:cze
n4:klicovaSlova
VA characteristic, MOSFET, electron density, diffusion current, drift current
n4:klicoveSlovo
n5:drift%20current n5:electron%20density n5:VA%20characteristic n5:diffusion%20current n5:MOSFET
n4:kontrolniKodProRIV
[29497F745A7E]
n4:mistoKonaniAkce
Brno
n4:mistoVydani
Nám. Republiky 15 Brno
n4:nazevZdroje
Electronic Devices and Systems EDS'09 IMAPS CS International Conference 2009
n4:obor
n20:JA
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
3
n4:projekt
n6:GA102%2F09%2F1920 n6:GD102%2F09%2FH074
n4:rokUplatneniVysledku
n12:2009
n4:tvurceVysledku
Šikula, Josef Sedláková, Vlasta Chvátal, Miloš
n4:typAkce
n11:WRD
n4:zahajeniAkce
2009-09-02+02:00
n4:zamer
n21:MSM0021630503
s:numberOfPages
4
n13:hasPublisher
NOVPRESS s.r.o.
n22:isbn
978-80-214-3933-7
n19:organizacniJednotka
26220