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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F09%3APU81971%21RIV10-MSM-26220___
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum
dcterms:title
RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position
skos:prefLabel
RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position
skos:notation
RIV/00216305:26220/09:PU81971!RIV10-MSM-26220___
n3:aktivita
n13:Z n13:P
n3:aktivity
P(GA102/09/1920), Z(MSM0021630503)
n3:cisloPeriodika
1
n3:dodaniDat
n9:2010
n3:domaciTvurceVysledku
n10:6541763 n10:7526938 n10:9770690 n10:6209947
n3:druhVysledku
n14:J
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
340066
n3:idVysledku
RIV/00216305:26220/09:PU81971
n3:jazykVysledku
n17:eng
n3:klicovaSlova
RTS noise, 1/f noise, MOSFET
n3:klicoveSlovo
n12:RTS%20noise n12:MOSFET n12:1%2Ff%20noise
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[3FD77C624B85]
n3:nazevZdroje
AIP conference proceedings
n3:obor
n16:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
6
n3:projekt
n4:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n9:2009
n3:svazekPeriodika
1129
n3:tvurceVysledku
Toita, Masato Pavelka, Jan Tacano, Munecazu Šikula, Josef Sedláková, Vlasta Chvátal, Miloš
n3:zamer
n19:MSM0021630503
s:issn
0094-243X
s:numberOfPages
4
n15:organizacniJednotka
26220