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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F09%3APU81971%21RIV09-GA0-26220___
rdf:type
skos:Concept n20:Vysledek
dcterms:description
Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum
dcterms:title
RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position
skos:prefLabel
RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position
skos:notation
RIV/00216305:26220/09:PU81971!RIV09-GA0-26220___
n3:aktivita
n13:P n13:Z
n3:aktivity
P(GA102/09/1920), Z(MSM0021630503)
n3:dodaniDat
n9:2009
n3:domaciTvurceVysledku
n6:7526938 n6:9770690 n6:6209947 n6:6541763
n3:druhVysledku
n8:D
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
340067
n3:idVysledku
RIV/00216305:26220/09:PU81971
n3:jazykVysledku
n10:eng
n3:klicovaSlova
RTS noise, 1/f noise, MOSFET
n3:klicoveSlovo
n7:MOSFET n7:1%2Ff%20noise n7:RTS%20noise
n3:kontrolniKodProRIV
[C917FB1841CB]
n3:mistoKonaniAkce
Pisa
n3:mistoVydani
U.S.A.
n3:nazevZdroje
Noise and Fluctuations
n3:obor
n22:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
6
n3:projekt
n19:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n9:2009
n3:tvurceVysledku
Šikula, Josef Pavelka, Jan Toita, Masato Tacano, Munecazu Chvátal, Miloš Sedláková, Vlasta
n3:typAkce
n18:WRD
n3:zahajeniAkce
2009-06-14+02:00
n3:zamer
n15:MSM0021630503
s:numberOfPages
4
n14:hasPublisher
American Institute of Physics
n16:isbn
978-0-7354-0665-0
n12:organizacniJednotka
26220