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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU78583%21RIV10-MSM-26220___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltage Ta and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changes of the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decreasing or increas Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltage Ta and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changes of the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decreasing or increas
dcterms:title
Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics
skos:prefLabel
Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics
skos:notation
RIV/00216305:26220/08:PU78583!RIV10-MSM-26220___
n3:aktivita
n17:Z
n3:aktivity
Z(MSM0021630503)
n3:dodaniDat
n15:2010
n3:domaciTvurceVysledku
n5:6541763 n5:5827582 n5:9770690 n5:8995923
n3:druhVysledku
n7:D
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n8:predkladatel
n3:idSjednocenehoVysledku
399025
n3:idVysledku
RIV/00216305:26220/08:PU78583
n3:jazykVysledku
n6:eng
n3:klicovaSlova
NbO capacitors, field crystalization
n3:klicoveSlovo
n10:NbO%20capacitors n10:field%20crystalization
n3:kontrolniKodProRIV
[C86CEEE34902]
n3:mistoKonaniAkce
Helsinky
n3:mistoVydani
Neuveden
n3:nazevZdroje
CARTS EUROPE 2008
n3:obor
n4:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n15:2008
n3:tvurceVysledku
Šikula, Josef Hlávka, Jan Tacano, Munecazu Navarová, Hana Sedláková, Vlasta Zedníček, Tomáš
n3:typAkce
n16:WRD
n3:zahajeniAkce
2008-10-20+02:00
n3:zamer
n21:MSM0021630503
s:numberOfPages
10
n13:hasPublisher
Neuveden
n14:isbn
0-7908-0121-3
n20:organizacniJednotka
26220