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Namespace Prefixes

PrefixIRI
n14http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n10http://purl.org/net/nknouf/ns/bibtex#
n6http://localhost/temp/predkladatel/
n18http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n8http://linked.opendata.cz/ontology/domain/vavai/
n13https://schema.org/
n5http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n9http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n19http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n21http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n17http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F08%3APU78578%21RIV11-MSM-26220___/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n16http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU78578%21RIV11-MSM-26220___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
Traps appearing both in the AlGaN/GaN and AlGaAs/GaAs heterostructures are assigned by the low frequency noise measurements. Current collapse has been monitored throughout the unpassivated and SiN-passivation processes of the AlGaN/GaN heterostructures: the noise level of E1 (47 meV) trap decreased by 10 dBA/?Hz by the SiN passivation process together with the current collapse in IV curves, while E2 (131 meV) and E3 (235 meV) levels became apparent after SiN passivation. The commercially available AlGaAs/GaAs LED heads for the page and FAX printers are found to have several deep levels introduced during the contact formation processes. Traps appearing both in the AlGaN/GaN and AlGaAs/GaAs heterostructures are assigned by the low frequency noise measurements. Current collapse has been monitored throughout the unpassivated and SiN-passivation processes of the AlGaN/GaN heterostructures: the noise level of E1 (47 meV) trap decreased by 10 dBA/?Hz by the SiN passivation process together with the current collapse in IV curves, while E2 (131 meV) and E3 (235 meV) levels became apparent after SiN passivation. The commercially available AlGaAs/GaAs LED heads for the page and FAX printers are found to have several deep levels introduced during the contact formation processes.
dcterms:title
EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS
skos:prefLabel
EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS
skos:notation
RIV/00216305:26220/08:PU78578!RIV11-MSM-26220___
n3:aktivita
n19:Z
n3:aktivity
Z(MSM0021630503)
n3:dodaniDat
n16:2011
n3:domaciTvurceVysledku
n18:9770690
n3:druhVysledku
n7:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
366755
n3:idVysledku
RIV/00216305:26220/08:PU78578
n3:jazykVysledku
n21:eng
n3:klicovaSlova
GaN, HEMT, 1/f noise
n3:klicoveSlovo
n9:1%2Ff%20noise n9:GaN n9:HEMT
n3:kontrolniKodProRIV
[9C8FEC9DED64]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Neuveden
n3:nazevZdroje
EDS 08
n3:obor
n11:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n16:2008
n3:tvurceVysledku
Yagi, Shuichi Matsui, Toshiaki Tanuma, Nobuhisa Okumura, Hajime Šikula, Josef Tacano, Munecazu
n3:typAkce
n14:WRD
n3:zahajeniAkce
2008-09-10+02:00
n3:zamer
n5:MSM0021630503
s:numberOfPages
6
n10:hasPublisher
Neuveden
n13:isbn
978-80-214-3717-3
n6:organizacniJednotka
26220