This HTML5 document contains 45 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n19http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n13http://localhost/temp/predkladatel/
n3http://purl.org/net/nknouf/ns/bibtex#
n16http://linked.opendata.cz/resource/domain/vavai/projekt/
n9http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n14http://linked.opendata.cz/ontology/domain/vavai/
n21https://schema.org/
n10http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/
skoshttp://www.w3.org/2004/02/skos/core#
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n22http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F08%3APU76329%21RIV10-MSM-26220___/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n8http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU76329%21RIV10-MSM-26220___
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Diffusion technology based PN junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions (hundreds of cm2) contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased PN junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown. The capacitance versus reverse voltage plots were measured using the %22Auto balancing bridge method%22, which proved to serve the purpose very well. Thus obtained capacitance versus reverse voltage characteristics provide information on the inhomogeneity nature resulting from local variations of the impurity concentration. Our measurement results have shown that valuable information on the junction, such as, the solar cell P-region acceptor concentration Diffusion technology based PN junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions (hundreds of cm2) contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased PN junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown. The capacitance versus reverse voltage plots were measured using the %22Auto balancing bridge method%22, which proved to serve the purpose very well. Thus obtained capacitance versus reverse voltage characteristics provide information on the inhomogeneity nature resulting from local variations of the impurity concentration. Our measurement results have shown that valuable information on the junction, such as, the solar cell P-region acceptor concentration
dcterms:title
On the determination of silicon solar cell properties via capacitance characteristics On the determination of silicon solar cell properties via capacitance characteristics
skos:prefLabel
On the determination of silicon solar cell properties via capacitance characteristics On the determination of silicon solar cell properties via capacitance characteristics
skos:notation
RIV/00216305:26220/08:PU76329!RIV10-MSM-26220___
n5:aktivita
n18:P n18:Z
n5:aktivity
P(GA102/06/1551), Z(MSM0021630503)
n5:dodaniDat
n8:2010
n5:domaciTvurceVysledku
n9:3502465 n9:3673332 n9:2967677
n5:druhVysledku
n12:D
n5:duvernostUdaju
n20:S
n5:entitaPredkladatele
n22:predkladatel
n5:idSjednocenehoVysledku
384717
n5:idVysledku
RIV/00216305:26220/08:PU76329
n5:jazykVysledku
n11:eng
n5:klicovaSlova
Defects, Capacitance, Silicon Solar Cell
n5:klicoveSlovo
n6:Silicon%20Solar%20Cell n6:Capacitance n6:Defects
n5:kontrolniKodProRIV
[66AADBD1F415]
n5:mistoKonaniAkce
Valencie
n5:mistoVydani
Valencia, Spain
n5:nazevZdroje
Proceedings of 23rd European Photovoltaic Solar Energy Conference
n5:obor
n7:BM
n5:pocetDomacichTvurcuVysledku
3
n5:pocetTvurcuVysledku
3
n5:projekt
n16:GA102%2F06%2F1551
n5:rokUplatneniVysledku
n8:2008
n5:tvurceVysledku
Koktavý, Pavel Škarvada, Pavel Macků, Robert
n5:typAkce
n19:EUR
n5:zahajeniAkce
2008-09-01+02:00
n5:zamer
n10:MSM0021630503
s:numberOfPages
4
n3:hasPublisher
WIP-Renewable Energies
n21:isbn
3-936338-24-8
n13:organizacniJednotka
26220