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Namespace Prefixes

PrefixIRI
n9http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n22http://purl.org/net/nknouf/ns/bibtex#
n19http://localhost/temp/predkladatel/
n14http://linked.opendata.cz/resource/domain/vavai/projekt/
n8http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n16http://linked.opendata.cz/ontology/domain/vavai/
n21https://schema.org/
n15http://linked.opendata.cz/resource/domain/vavai/zamer/
n11http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F08%3APU74427%21RIV10-MSM-26220___/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n13http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n10http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU74427%21RIV10-MSM-26220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Bulk resistance decay of two cadmium telluride single crystals was investigated. Each CdTe crystal has four golden contacts, two current contacts and two voltage contacts. That allows us to distinguish between bulk resistance and contact area. The bulk resistance of each CdTe single crystal was measured during long time interval with an applied voltage U = 16 V. Detectors were placed into a cryostat. That allowed to hold the temperature constant during the measurements and eliminate the illumination influence. The temperature of the samples was 300 K at first and after some period of time (approximately 1 day) it was sharply raised to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the co Bulk resistance decay of two cadmium telluride single crystals was investigated. Each CdTe crystal has four golden contacts, two current contacts and two voltage contacts. That allows us to distinguish between bulk resistance and contact area. The bulk resistance of each CdTe single crystal was measured during long time interval with an applied voltage U = 16 V. Detectors were placed into a cryostat. That allowed to hold the temperature constant during the measurements and eliminate the illumination influence. The temperature of the samples was 300 K at first and after some period of time (approximately 1 day) it was sharply raised to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the co
dcterms:title
Relaxation Time in CdTe Single Crystals Relaxation Time in CdTe Single Crystals
skos:prefLabel
Relaxation Time in CdTe Single Crystals Relaxation Time in CdTe Single Crystals
skos:notation
RIV/00216305:26220/08:PU74427!RIV10-MSM-26220___
n4:aktivita
n6:Z n6:P
n4:aktivity
P(GA102/07/0113), Z(MSM0021630503)
n4:dodaniDat
n10:2010
n4:domaciTvurceVysledku
n8:2108585 n8:9770690 Andreev, Alexey n8:6039618
n4:druhVysledku
n17:D
n4:duvernostUdaju
n5:S
n4:entitaPredkladatele
n11:predkladatel
n4:idSjednocenehoVysledku
392216
n4:idVysledku
RIV/00216305:26220/08:PU74427
n4:jazykVysledku
n18:eng
n4:klicovaSlova
relaxation time constant, hole mobility, CdTe single crystal
n4:klicoveSlovo
n13:CdTe%20single%20crystal n13:hole%20mobility n13:relaxation%20time%20constant
n4:kontrolniKodProRIV
[8298C2EAD2FF]
n4:mistoKonaniAkce
Budapest
n4:mistoVydani
Budapest, Hungary
n4:nazevZdroje
ISSE 2008 Reliability and Life-time Prediction
n4:obor
n20:BM
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n14:GA102%2F07%2F0113
n4:rokUplatneniVysledku
n10:2008
n4:tvurceVysledku
Holcman, Vladimír Šikula, Josef Andreev, Alexey Grmela, Lubomír
n4:typAkce
n9:WRD
n4:zahajeniAkce
2008-05-07+02:00
n4:zamer
n15:MSM0021630503
s:numberOfPages
2
n22:hasPublisher
Zsolt Illyefalvi-Vitez
n21:isbn
978-963-06-4915-5
n19:organizacniJednotka
26220