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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU74150%21RIV10-MSM-26220___
rdf:type
skos:Concept n18:Vysledek
dcterms:description
Measurements of reverse-biased junctions can provide valuable information on the solar cells and their defects. A number of papers were published in the past concerning the measurement methodology, however, for devices having relatively low pn junction area only. The junction area is much larger in solar cells. Therefore, a new measurement methodology had to be developed for them. In large-area pn junctions, there are some phenomena which are negligible in the smaller-area junction measurements, but are introducing considerable errors in the measurement results of large-area junctions. The barrier capacity is one of the parameters of the solar cells under investigation. We employed the near-field and the electron microscopy to study the solar cell surface texture, which provided us with some information on the pn junction configuration. Measurements of reverse-biased junctions can provide valuable information on the solar cells and their defects. A number of papers were published in the past concerning the measurement methodology, however, for devices having relatively low pn junction area only. The junction area is much larger in solar cells. Therefore, a new measurement methodology had to be developed for them. In large-area pn junctions, there are some phenomena which are negligible in the smaller-area junction measurements, but are introducing considerable errors in the measurement results of large-area junctions. The barrier capacity is one of the parameters of the solar cells under investigation. We employed the near-field and the electron microscopy to study the solar cell surface texture, which provided us with some information on the pn junction configuration.
dcterms:title
Advanced non-destructive diagnostics of monocrystalline silicon solar cells Advanced non-destructive diagnostics of monocrystalline silicon solar cells
skos:prefLabel
Advanced non-destructive diagnostics of monocrystalline silicon solar cells Advanced non-destructive diagnostics of monocrystalline silicon solar cells
skos:notation
RIV/00216305:26220/08:PU74150!RIV10-MSM-26220___
n3:aktivita
n15:P n15:Z
n3:aktivity
P(GA102/06/1551), Z(MSM0021630503)
n3:cisloPeriodika
9
n3:dodaniDat
n12:2010
n3:domaciTvurceVysledku
n11:3673332 n11:3502465 n11:2967677
n3:druhVysledku
n17:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
355000
n3:idVysledku
RIV/00216305:26220/08:PU74150
n3:jazykVysledku
n4:eng
n3:klicovaSlova
solar cell, pn junction, barrier capacitance, scanning near-field optical microscopy (SNOM)
n3:klicoveSlovo
n8:scanning%20near-field%20optical%20microscopy%20%28SNOM%29 n8:barrier%20capacitance n8:pn%20junction n8:solar%20cell
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[E74E81B4E006]
n3:nazevZdroje
WSEAS Transactions on Electronics
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n10:GA102%2F06%2F1551
n3:rokUplatneniVysledku
n12:2008
n3:svazekPeriodika
4
n3:tvurceVysledku
Koktavý, Pavel Macků, Robert Škarvada, Pavel
n3:zamer
n16:MSM0021630503
s:issn
1109-9445
s:numberOfPages
6
n9:organizacniJednotka
26220