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Statements

Subject Item

n2:RIV%2F00216305%3A26220%2F08%3APU74140%21RIV10-MSM-26220___

rdf:type

skos:Concept n20:Vysledek

dcterms:description

This text is dealing with some structures which enable tuning of snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC). This text is dealing with some structures which enable tuning of snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC).

dcterms:title

SCR I-V Characteristics tuning for applications of ESD protections SCR I-V Characteristics tuning for applications of ESD protections

skos:prefLabel

SCR I-V Characteristics tuning for applications of ESD protections SCR I-V Characteristics tuning for applications of ESD protections

skos:notation

RIV/00216305:26220/08:PU74140!RIV10-MSM-26220___

n3:aktivita

n12:S

n3:aktivity

S

n3:dodaniDat

n16:2010

n3:domaciTvurceVysledku

n14:5604494

n3:druhVysledku

n9:D

n3:duvernostUdaju

n17:S

n3:entitaPredkladatele

n15:predkladatel

n3:idSjednocenehoVysledku

393907

n3:idVysledku

RIV/00216305:26220/08:PU74140

n3:jazykVysledku

n7:eng

n3:klicovaSlova

SCR, HVASCR,VLSCR,LVTSCR

n3:klicoveSlovo

n5:HVASCR n5:SCR n5:LVTSCR n5:VLSCR

n3:kontrolniKodProRIV

[8AF61978B862]

n3:mistoKonaniAkce

FEKT VUT v Brně

n3:mistoVydani

Neuveden

n3:nazevZdroje

Proceedings of the 14th conference Student EEICT 2008

n3:obor

n10:JA

n3:pocetDomacichTvurcuVysledku

1

n3:pocetTvurcuVysledku

1

n3:rokUplatneniVysledku

n16:2008

n3:tvurceVysledku

Běťák, Petr

n3:typAkce

n18:CST

n3:zahajeniAkce

2008-04-24+02:00

s:numberOfPages

5

n6:hasPublisher

Ing.Zdeněk Novotný, CSc. , Ondráčkova 105, Brno

n4:isbn

978-80-214-3617-6

n8:organizacniJednotka

26220