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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU73784%21RIV10-MSM-26220___
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Low frequency noise of Si n-MOSFET and GaN/AlGaN HFET devices was measured in 10 uHz to 100 kHz range, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method in 1 ms to 100 s windows and noise spectral density of crossing events was found almost constant in the 10-5 to 103 Hz frequency range in all samples. This indicates that there is no 1/f fluctuation of crossing rate given by trap characteristics, although charge carrier transport mechanisms give rise to quite different 1/f noise levels in Si and GaN devices. Statistical analysis of carrier capture and emission events duration revealed departure from exponential distribution in some samples, but any correlation among successive pulses wasn't obvious. Low frequency noise of Si n-MOSFET and GaN/AlGaN HFET devices was measured in 10 uHz to 100 kHz range, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method in 1 ms to 100 s windows and noise spectral density of crossing events was found almost constant in the 10-5 to 103 Hz frequency range in all samples. This indicates that there is no 1/f fluctuation of crossing rate given by trap characteristics, although charge carrier transport mechanisms give rise to quite different 1/f noise levels in Si and GaN devices. Statistical analysis of carrier capture and emission events duration revealed departure from exponential distribution in some samples, but any correlation among successive pulses wasn't obvious.
dcterms:title
RTS Noise in Si MOSFETs and GaN/AlGaN HFETs RTS Noise in Si MOSFETs and GaN/AlGaN HFETs
skos:prefLabel
RTS Noise in Si MOSFETs and GaN/AlGaN HFETs RTS Noise in Si MOSFETs and GaN/AlGaN HFETs
skos:notation
RIV/00216305:26220/08:PU73784!RIV10-MSM-26220___
n3:aktivita
n4:P n4:Z
n3:aktivity
P(GA102/05/2095), Z(MSM0021630503)
n3:cisloPeriodika
9
n3:dodaniDat
n11:2010
n3:domaciTvurceVysledku
n8:9770690 n8:7526938
n3:druhVysledku
n6:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
393529
n3:idVysledku
RIV/00216305:26220/08:PU73784
n3:jazykVysledku
n19:eng
n3:klicovaSlova
GaN, GaN/AlGaN, HFET, MOSFET, 1/f noise, RTS noise
n3:klicoveSlovo
n9:GaN n9:MOSFET n9:1%2Ff%20noise n9:RTS%20noise n9:GaN%2FAlGaN n9:HFET
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[C425B30A693E]
n3:nazevZdroje
WSEAS Transactions on Electronics
n3:obor
n5:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n15:GA102%2F05%2F2095
n3:rokUplatneniVysledku
n11:2008
n3:svazekPeriodika
4
n3:tvurceVysledku
Pavelka, Jan Šikula, Josef Tacano, Munecazu
n3:zamer
n16:MSM0021630503
s:issn
1109-9445
s:numberOfPages
5
n12:organizacniJednotka
26220