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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU73782%21RIV10-MSM-26220___
rdf:type
skos:Concept n18:Vysledek
dcterms:description
Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K. The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5. Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K. The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5.
dcterms:title
Noise Spectroscopy of GaN/AlGaN HFETs Noise Spectroscopy of GaN/AlGaN HFETs
skos:prefLabel
Noise Spectroscopy of GaN/AlGaN HFETs Noise Spectroscopy of GaN/AlGaN HFETs
skos:notation
RIV/00216305:26220/08:PU73782!RIV10-MSM-26220___
n5:aktivita
n13:P n13:Z
n5:aktivity
P(GA102/05/2095), Z(MSM0021630503)
n5:cisloPeriodika
9
n5:dodaniDat
n8:2010
n5:domaciTvurceVysledku
n11:7526938 n11:9770690
n5:druhVysledku
n15:J
n5:duvernostUdaju
n16:S
n5:entitaPredkladatele
n12:predkladatel
n5:idSjednocenehoVysledku
382834
n5:idVysledku
RIV/00216305:26220/08:PU73782
n5:jazykVysledku
n10:eng
n5:klicovaSlova
GaN, GaN/AlGaN, HFET, HEMT, 1/f noise, g-r noise, Hooge parameter
n5:klicoveSlovo
n6:1%2Ff%20noise n6:g-r%20noise n6:GaN%2FAlGaN n6:HFET n6:HEMT n6:GaN n6:Hooge%20parameter
n5:kodStatuVydavatele
US - Spojené státy americké
n5:kontrolniKodProRIV
[F62956390E8E]
n5:nazevZdroje
WSEAS Transactions on Electronics
n5:obor
n14:JA
n5:pocetDomacichTvurcuVysledku
2
n5:pocetTvurcuVysledku
4
n5:projekt
n19:GA102%2F05%2F2095
n5:rokUplatneniVysledku
n8:2008
n5:svazekPeriodika
4
n5:tvurceVysledku
Tacano, Munecazu Tanuma, Nobuhisa Šikula, Josef Pavelka, Jan
n5:zamer
n7:MSM0021630503
s:issn
1109-9445
s:numberOfPages
4
n17:organizacniJednotka
26220