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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n12http://localhost/temp/predkladatel/
n16http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n10http://linked.opendata.cz/ontology/domain/vavai/
n14http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n6http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F08%3APU73709%21RIV10-MSM-26220___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n11http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n18http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F08%3APU73709%21RIV10-MSM-26220___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS. Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS.
dcterms:title
Snap-back characteristics tuning of SCR-based semiconductor structures Snap-back characteristics tuning of SCR-based semiconductor structures
skos:prefLabel
Snap-back characteristics tuning of SCR-based semiconductor structures Snap-back characteristics tuning of SCR-based semiconductor structures
skos:notation
RIV/00216305:26220/08:PU73709!RIV10-MSM-26220___
n3:aktivita
n13:Z
n3:aktivity
Z(MSM0021630503)
n3:cisloPeriodika
9
n3:dodaniDat
n18:2010
n3:domaciTvurceVysledku
n16:5604494 n16:1696688
n3:druhVysledku
n5:J
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
395467
n3:idVysledku
RIV/00216305:26220/08:PU73709
n3:jazykVysledku
n17:eng
n3:klicovaSlova
SCR, snap-back, ESD
n3:klicoveSlovo
n11:ESD n11:snap-back n11:SCR
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[3364BFD82F01]
n3:nazevZdroje
WSEAS Transactions on Electronics
n3:obor
n4:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n18:2008
n3:svazekPeriodika
4
n3:tvurceVysledku
Běťák, Petr Musil, Vladislav
n3:zamer
n14:MSM0021630503
s:issn
1109-9445
s:numberOfPages
6
n12:organizacniJednotka
26220