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Namespace Prefixes

PrefixIRI
n13http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n20http://localhost/temp/predkladatel/
n14http://purl.org/net/nknouf/ns/bibtex#
n6http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n16http://linked.opendata.cz/ontology/domain/vavai/
n15http://linked.opendata.cz/resource/domain/vavai/zamer/
n9https://schema.org/
n18http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F07%3APU71778%21RIV08-MSM-26220___/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n11http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n12http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n21http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n19http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F07%3APU71778%21RIV08-MSM-26220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT. popis In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT.
dcterms:title
Modeling of quantization effects in NMOSFET channel Modeling of quantization effects in NMOSFET channel Modelování kvantizačních jevů v NMOSFET kaníle
skos:prefLabel
Modelování kvantizačních jevů v NMOSFET kaníle Modeling of quantization effects in NMOSFET channel Modeling of quantization effects in NMOSFET channel
skos:notation
RIV/00216305:26220/07:PU71778!RIV08-MSM-26220___
n3:strany
442-446
n3:aktivita
n7:Z
n3:aktivity
Z(MSM0021630503)
n3:dodaniDat
n19:2008
n3:domaciTvurceVysledku
n6:5498228
n3:druhVysledku
n17:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
434326
n3:idVysledku
RIV/00216305:26220/07:PU71778
n3:jazykVysledku
n12:eng
n3:klicovaSlova
Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, 2D, Threshold voltage, Quantization effects, Van Dort model, Density gradient model, Schroedinger-Poisson solver
n3:klicoveSlovo
n11:2D n11:Schroedinger-Poisson%20solver n11:Density%20gradient%20model n11:Device%20modeling n11:Device%20simulation n11:Threshold%20voltage n11:Van%20Dort%20model n11:Quantization%20effects n11:Curve%20fitting n11:Electrical%20simulation n11:Parameter%20extraction
n3:kontrolniKodProRIV
[6347D83E7103]
n3:mistoKonaniAkce
BRNO
n3:mistoVydani
Brno
n3:nazevZdroje
Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
n3:obor
n21:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
1
n3:rokUplatneniVysledku
n19:2007
n3:tvurceVysledku
Recman, Milan
n3:typAkce
n13:WRD
n3:zahajeniAkce
2007-09-20+02:00
n3:zamer
n15:MSM0021630503
s:numberOfPages
5
n14:hasPublisher
Ing. Zdeněk Novotný CSc.
n9:isbn
978-80-214-3470-7
n20:organizacniJednotka
26220