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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F07%3APU70494%21RIV08-GA0-26220___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation. Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation. Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.
dcterms:title
RTS noise in submicron devices RTS noise in submicron devices RTS šum v submikronových součástkách
skos:prefLabel
RTS noise in submicron devices RTS šum v submikronových součástkách RTS noise in submicron devices
skos:notation
RIV/00216305:26220/07:PU70494!RIV08-GA0-26220___
n3:strany
114-117
n3:aktivita
n14:Z n14:P
n3:aktivity
P(GA102/05/2095), Z(MSM0021630503)
n3:dodaniDat
n4:2008
n3:domaciTvurceVysledku
n18:9770690 n18:7526938 n18:6209947
n3:druhVysledku
n19:D
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
448616
n3:idVysledku
RIV/00216305:26220/07:PU70494
n3:jazykVysledku
n17:eng
n3:klicovaSlova
RTS noise, 1/f noise, MOSFET, HFET, GaN, InGaAs
n3:klicoveSlovo
n11:InGaAs n11:1%2Ff%20noise n11:MOSFET n11:GaN n11:HFET n11:RTS%20noise
n3:kontrolniKodProRIV
[206CE4DA4BC7]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Brno
n3:nazevZdroje
New Trends in Physics
n3:obor
n22:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
4
n3:projekt
n21:GA102%2F05%2F2095
n3:rokUplatneniVysledku
n4:2007
n3:tvurceVysledku
Tacano, Munecazu Pavelka, Jan Chvátal, Miloš Šikula, Josef
n3:typAkce
n13:EUR
n3:zahajeniAkce
2007-11-15+01:00
n3:zamer
n12:MSM0021630503
s:numberOfPages
4
n10:hasPublisher
Vysoké učení technické v Brně
n15:isbn
978-80-7355-078-3
n16:organizacniJednotka
26220