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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F07%3APU69172%21RIV08-GA0-26220___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. Statistical analysis of RTS noise in InGaAs sample revealed considerable correlation of subsequent pulse duration. RTS šum byl měřen v různých polovodičových součástkách - Si MOSFET a GaN/AlGaN a InGaAs/InAlAs heterostrukturách. Statistická analýza šumu RTS v případě InGaAs vzorku prokázala korelaci délek sousedních pulsů. RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. Statistical analysis of RTS noise in InGaAs sample revealed considerable correlation of subsequent pulse duration.
dcterms:title
Non-Poisson Process in RTS-like noise Ne-Poissonovský proces v šumu typu RTS Non-Poisson Process in RTS-like noise
skos:prefLabel
Non-Poisson Process in RTS-like noise Ne-Poissonovský proces v šumu typu RTS Non-Poisson Process in RTS-like noise
skos:notation
RIV/00216305:26220/07:PU69172!RIV08-GA0-26220___
n3:strany
111-114
n3:aktivita
n19:Z n19:P
n3:aktivity
P(GA102/05/2095), Z(MSM0021630503)
n3:dodaniDat
n15:2008
n3:domaciTvurceVysledku
n20:9770690 n20:7526938
n3:druhVysledku
n22:D
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
437552
n3:idVysledku
RIV/00216305:26220/07:PU69172
n3:jazykVysledku
n21:eng
n3:klicovaSlova
RTS noise, 1/f noise, MOSFET, HFET, InGaAs, GaN
n3:klicoveSlovo
n4:1%2Ff%20noise n4:HFET n4:MOSFET n4:InGaAs n4:GaN n4:RTS%20noise
n3:kontrolniKodProRIV
[A6F7596EF75E]
n3:mistoKonaniAkce
Tokyo
n3:mistoVydani
Tokio
n3:nazevZdroje
Proc. ICNF 2007 AIP Conf. Proc. Vol. 922
n3:obor
n6:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n17:GA102%2F05%2F2095
n3:rokUplatneniVysledku
n15:2007
n3:tvurceVysledku
Pavelka, Jan Tacano, Munecazu Šikula, Josef
n3:typAkce
n18:WRD
n3:zahajeniAkce
2007-09-09+02:00
n3:zamer
n5:MSM0021630503
s:numberOfPages
4
n11:hasPublisher
AIP
n7:isbn
978-0-7354-0432-8
n10:organizacniJednotka
26220