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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F06%3APU62989%21RIV07-GA0-26220___
rdf:type
n6:Vysledek skos:Concept
dcterms:description
Článek pojednává o teoretických a experimentálních výsledcích získaných při studiu lokálních lavinových průrazů zpětně polarizovaných PN přechodů GaAsP LED diod. The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions’ structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction. The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions’ structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.
dcterms:title
On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions Vlastnosti GaAsP diod při lokálních lavinových průrazech PN přechodu On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions
skos:prefLabel
Vlastnosti GaAsP diod při lokálních lavinových průrazech PN přechodu On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions
skos:notation
RIV/00216305:26220/06:PU62989!RIV07-GA0-26220___
n3:strany
56-59
n3:aktivita
n5:P n5:Z
n3:aktivity
P(GA102/06/1551), Z(MSM0021630503)
n3:dodaniDat
n13:2007
n3:domaciTvurceVysledku
n18:9458670 n18:3502465
n3:druhVysledku
n12:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n22:predkladatel
n3:idSjednocenehoVysledku
490493
n3:idVysledku
RIV/00216305:26220/06:PU62989
n3:jazykVysledku
n9:eng
n3:klicovaSlova
Microplasma noise, GaAsP LED diode, PN junction, Avalanche, Impact ionization
n3:klicoveSlovo
n17:PN%20junction n17:Impact%20ionization n17:Microplasma%20noise n17:GaAsP%20LED%20diode n17:Avalanche
n3:kontrolniKodProRIV
[DC6F58DC73CD]
n3:mistoKonaniAkce
Bratislava
n3:mistoVydani
Bratislava
n3:nazevZdroje
Physical and Material Engineering 2006
n3:obor
n21:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n10:GA102%2F06%2F1551
n3:rokUplatneniVysledku
n13:2006
n3:tvurceVysledku
Koktavý, Bohumil Koktavý, Pavel
n3:typAkce
n16:EUR
n3:zahajeniAkce
2006-09-05+02:00
n3:zamer
n14:MSM0021630503
s:numberOfPages
4
n7:hasPublisher
Slovenská technická univerzita v Bratislave
n20:isbn
80-227-2467-X
n8:organizacniJednotka
26220