This HTML5 document contains 42 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n6http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n16http://purl.org/net/nknouf/ns/bibtex#
n4http://localhost/temp/predkladatel/
n15http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F06%3APU57534%21RIV10-MSM-26220___/
n14http://linked.opendata.cz/ontology/domain/vavai/
n13https://schema.org/
n12http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n11http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n10http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F06%3APU57534%21RIV10-MSM-26220___
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction. Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction.
dcterms:title
The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness
skos:prefLabel
The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness
skos:notation
RIV/00216305:26220/06:PU57534!RIV10-MSM-26220___
n3:aktivita
n8:Z
n3:aktivity
Z(MSM0021630503)
n3:dodaniDat
n10:2010
n3:domaciTvurceVysledku
Ahmed, Mustafa M. Abdalla
n3:druhVysledku
n20:D
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
470790
n3:idVysledku
RIV/00216305:26220/06:PU57534
n3:jazykVysledku
n17:eng
n3:klicovaSlova
electroluminescence, ZnS:Mn thin film, brightess, threshold voltage, hysteresis, response time
n3:klicoveSlovo
n11:hysteresis n11:brightess n11:response%20time n11:ZnS%3AMn%20thin%20film n11:threshold%20voltage n11:electroluminescence
n3:kontrolniKodProRIV
[826C1EC7947C]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Brno
n3:nazevZdroje
Proceedings of the 12th Conference STUDENT EEICT 2006
n3:obor
n18:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
1
n3:rokUplatneniVysledku
n10:2006
n3:tvurceVysledku
Ahmed, Mustafa M. Abdalla
n3:typAkce
n6:CST
n3:zahajeniAkce
2006-04-27+02:00
n3:zamer
n12:MSM0021630503
s:numberOfPages
5
n16:hasPublisher
Vysoké učení technické v Brně. (Fakulta elektrotechniky a komunikačních technologií; Fakulta informačních technologií)
n13:isbn
80-214-3162-8
n4:organizacniJednotka
26220