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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F05%3APU52165%21RIV06-MSM-26220___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Experimentálně jsme určili mobilitu a koncentraci nosičů náboje v epitaxním n-GaN jako funkci teploty v rozmezí 300 až 15K. Naměřené hodnoty jsou v dobrém souladu s výsledky numerické analýzy, za předpokladu určité míry kompenzace. Po vytvoření ohmickýchkontaktů za optimální teploty a délky ohřevu jsme naměřili typické charakteristiky šumu 1/f. The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period. The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.
dcterms:title
Hoogeův parametr epitaxního GaN na safíru Hooge noise parameter of epitaxial n-GaN on sapphire Hooge noise parameter of epitaxial n-GaN on sapphire
skos:prefLabel
Hoogeův parametr epitaxního GaN na safíru Hooge noise parameter of epitaxial n-GaN on sapphire Hooge noise parameter of epitaxial n-GaN on sapphire
skos:notation
RIV/00216305:26220/05:PU52165!RIV06-MSM-26220___
n3:strany
865-870
n3:aktivita
n11:Z
n3:aktivity
Z(MSM0021630503)
n3:cisloPeriodika
6
n3:dodaniDat
n12:2006
n3:domaciTvurceVysledku
n13:9770690 n13:7526938
n3:druhVysledku
n16:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
523718
n3:idVysledku
RIV/00216305:26220/05:PU52165
n3:jazykVysledku
n6:eng
n3:klicovaSlova
GaN, 1/f noise, Hooge noise parameter, ohmic contact
n3:klicoveSlovo
n9:1%2Ff%20noise n9:ohmic%20contact n9:Hooge%20noise%20parameter n9:GaN
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[83F664ECBF07]
n3:nazevZdroje
Solid State Electronics
n3:obor
n15:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n12:2005
n3:svazekPeriodika
49
n3:tvurceVysledku
Tanuma, Nobuhisa Hashiguchi, Sumihisa Pavelka, Jan Šikula, Josef Matsui, Toshiaki Tacano, Munecazu
n3:zamer
n17:MSM0021630503
s:issn
0038-1101
s:numberOfPages
6
n4:organizacniJednotka
26220