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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F05%3APU52162%21RIV06-MSM-26220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5. Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5. Změřili jsme šumové charakteristiky epitaxních vrstev GaN na safírové podložce a GaN/AlGaN HFET struktur na safíru nebo SiC v teplotním rozsahu 13K až 300K. Ohmické kontakty byly vyrobeny pomocí Ti/Al/Ni/Au a kontaktní šum shledán zanedbatelným pomocí TLM analýzy. Hoogeův parametr epitaxního GaN byl 2x10-3 při 300K a postupně klesal na 10-4 v okolí 50K. HFETy GaN/AlGaN na SiC měly alfaH hodnoty v rozmezí 10-4 až 10-5.
dcterms:title
Hooge Noise Parameter of GaN HFETs on SiC Hoogeův parametr šumu GaN HFETů na SiC Hooge Noise Parameter of GaN HFETs on SiC
skos:prefLabel
Hoogeův parametr šumu GaN HFETů na SiC Hooge Noise Parameter of GaN HFETs on SiC Hooge Noise Parameter of GaN HFETs on SiC
skos:notation
RIV/00216305:26220/05:PU52162!RIV06-MSM-26220___
n3:strany
343-346
n3:aktivita
n20:Z
n3:aktivity
Z(MSM0021630503)
n3:dodaniDat
n7:2006
n3:domaciTvurceVysledku
n9:7526938 n9:9770690
n3:druhVysledku
n15:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
523719
n3:idVysledku
RIV/00216305:26220/05:PU52162
n3:jazykVysledku
n12:eng
n3:klicovaSlova
GaN, 1/f noise, HFET
n3:klicoveSlovo
n11:1%2Ff%20noise n11:HFET n11:GaN
n3:kontrolniKodProRIV
[9AE390BAFFD5]
n3:mistoKonaniAkce
Salamanca, Spain
n3:mistoVydani
Salamanka, Španělsko
n3:nazevZdroje
Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780
n3:obor
n21:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n7:2005
n3:tvurceVysledku
Tacano, Munecazu Yagi, Shuichi Šikula, Josef Tanuma, Nobuhisa Hashiguchi, Sumihisa Pavelka, Jan Okumura, Hajime Uemura, T.
n3:typAkce
n17:WRD
n3:zahajeniAkce
2005-09-19+02:00
n3:zamer
n6:MSM0021630503
s:numberOfPages
4
n18:hasPublisher
University of Salamanca
n8:isbn
0-7354-0267-1
n14:organizacniJednotka
26220