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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F04%3APU52207%21RIV06-MSM-26220___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin g lambda values. The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin g lambda values. The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin g lambda values.
dcterms:title
Dependence of Hooge constant on mean free path of materials Dependence of Hooge constant on mean free path of materials Závislost Hoogeova parametru na střední volné dráze v materiálech
skos:prefLabel
Dependence of Hooge constant on mean free path of materials Závislost Hoogeova parametru na střední volné dráze v materiálech Dependence of Hooge constant on mean free path of materials
skos:notation
RIV/00216305:26220/04:PU52207!RIV06-MSM-26220___
n5:strany
310-319
n5:aktivita
n20:Z
n5:aktivity
Z(MSM 262200022)
n5:dodaniDat
n13:2006
n5:domaciTvurceVysledku
n18:7526938
n5:druhVysledku
n14:D
n5:duvernostUdaju
n7:S
n5:entitaPredkladatele
n21:predkladatel
n5:idSjednocenehoVysledku
559738
n5:idVysledku
RIV/00216305:26220/04:PU52207
n5:jazykVysledku
n16:eng
n5:klicovaSlova
Hooge constant, mean free path, compound semiconductors, InGaAs, InP, GaAs, mobility fluctuations
n5:klicoveSlovo
n6:GaAs n6:compound%20semiconductors n6:mobility%20fluctuations n6:mean%20free%20path n6:InGaAs n6:InP n6:Hooge%20constant
n5:kontrolniKodProRIV
[C6F15680E20A]
n5:mistoKonaniAkce
Maspalomas, Gran Canaria
n5:mistoVydani
USA
n5:nazevZdroje
Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials
n5:obor
n8:JA
n5:pocetDomacichTvurcuVysledku
1
n5:pocetTvurcuVysledku
5
n5:rokUplatneniVysledku
n13:2004
n5:tvurceVysledku
Pavelka, Jan Hashiguchi, Sumihisa Yokokura, Saburo Tanuma, Nobuhisa Tacano, Munecazu
n5:typAkce
n15:WRD
n5:zahajeniAkce
2004-05-26+02:00
n5:zamer
n9:MSM%20262200022
s:numberOfPages
10
n12:hasPublisher
The Society of Photo-Optical Instrumentation Engineers
n17:isbn
0-8194-5392-7
n11:organizacniJednotka
26220