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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F04%3APU45426%21RIV%2F2005%2FMSM%2F262205%2FN
rdf:type
skos:Concept n12:Vysledek
dcterms:description
Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus mmay be used as an efficient tool to evaluate the PN junction inhomogeneity. Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus mmay be used as an efficient tool to evaluate the PN junction inhomogeneity. Výskyt oblastí mikroplazmy v PN přechodech je podmíněn nedokonalostmi krystalické struktury. V důsledku tohoto vykazují tyto oblasti nižší napětí nutné ke vzniku lokálních lavinových průrazů, než je průrazné napětí zbytku homogenního PN přechodu.
dcterms:title
Local Avalanche Breakdowns in Semiconductor GaAsP Diodes Lokální lavinové průrazy v polovodičových GaAsP diodách Local Avalanche Breakdowns in Semiconductor GaAsP Diodes
skos:prefLabel
Local Avalanche Breakdowns in Semiconductor GaAsP Diodes Lokální lavinové průrazy v polovodičových GaAsP diodách Local Avalanche Breakdowns in Semiconductor GaAsP Diodes
skos:notation
RIV/00216305:26220/04:PU45426!RIV/2005/MSM/262205/N
n3:strany
58-61
n3:aktivita
n6:Z
n3:aktivity
Z(MSM 262200022)
n3:dodaniDat
n9:2005
n3:domaciTvurceVysledku
n11:3582620 n11:3502465 n11:9770690
n3:druhVysledku
n17:D
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
571688
n3:idVysledku
RIV/00216305:26220/04:PU45426
n3:jazykVysledku
n14:eng
n3:klicovaSlova
Avalanche breakdowns, PN junction, Microplasma noise, GaAsP diodes
n3:klicoveSlovo
n8:GaAsP%20diodes n8:PN%20junction n8:Avalanche%20breakdowns n8:Microplasma%20noise
n3:kontrolniKodProRIV
[1EF2F5F702A8]
n3:mistoKonaniAkce
Niš, Srbsko a Černá Hora
n3:mistoVydani
Nis, Serbia & Montenegro
n3:nazevZdroje
MIEL 04
n3:obor
n10:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:rokUplatneniVysledku
n9:2004
n3:tvurceVysledku
Šikula, Josef Štourač, Ladislav Koktavý, Pavel
n3:typAkce
n16:WRD
n3:zahajeniAkce
2004-05-16+02:00
n3:zamer
n13:MSM%20262200022
s:numberOfPages
4
n20:hasPublisher
University of Nis
n18:organizacniJednotka
26220