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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F04%3APU43759%21RIV%2F2005%2FMSM%2F262205%2FN
rdf:type
skos:Concept n15:Vysledek
dcterms:description
The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application. Článek ukazuje, jak může být SNOM použit na charakterizování polovodičů s kvantovými jámami. Nekteré optické charakterizační metody, které jsou značně používány ve vzdáleném poli, jako jsou odrazivost, spektroskopie diferenční odrazivosti, životnost nosičů jsou zkoumány z hlediska blízkého pole používajího SNOM. Pro některé těchto technik jsou prezentována experimentální data. The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application.
dcterms:title
Local photoluminescence measurements of semiconductor surface defects Lokální měření fotoluminiscence defektů polovodičového povrchu Local photoluminescence measurements of semiconductor surface defects
skos:prefLabel
Local photoluminescence measurements of semiconductor surface defects Lokální měření fotoluminiscence defektů polovodičového povrchu Local photoluminescence measurements of semiconductor surface defects
skos:notation
RIV/00216305:26220/04:PU43759!RIV/2005/MSM/262205/N
n3:strany
131-137
n3:aktivita
n11:Z n11:P
n3:aktivity
P(ME 544), Z(MSM 262200022)
n3:cisloPeriodika
5477
n3:dodaniDat
n18:2005
n3:domaciTvurceVysledku
n13:2762854 n13:6493645 n13:9090584 n13:1824554 n13:6001041
n3:druhVysledku
n6:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
571697
n3:idVysledku
RIV/00216305:26220/04:PU43759
n3:jazykVysledku
n17:eng
n3:klicovaSlova
Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects
n3:klicoveSlovo
n4:Spectroscopy n4:surface n4:near%20field%20optics n4:defects n4:local%20photoluminescence n4:semiconductor n4:SNOM
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[D09849362EE2]
n3:nazevZdroje
Proceedings of SPIE
n3:obor
n16:JA
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n14:ME%20544
n3:rokUplatneniVysledku
n18:2004
n3:svazekPeriodika
NEUVEDEN
n3:tvurceVysledku
Brüstlová, Jitka Tománek, Pavel Uhdeová, Naděžda Dobis, Pavel Benešová, Markéta
n3:zamer
n19:MSM%20262200022
s:issn
0277-786X
s:numberOfPages
7
n5:organizacniJednotka
26220