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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F03%3APU42130%21RIV06-GA0-26220___
rdf:type
n5:Vysledek skos:Concept
dcterms:description
Sledování bistabilního mechanismu vedení proudu v závěrně polarizovaných PN přechodech může být užito jako významného prostředku pro studium nehomogenit v těchto PN přechodech. Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rmss value versus DC current plot based method. Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rmss value versus DC current plot based method.
dcterms:title
Diagnostics of GaAsP Light Emitting Diode PN Junctions Diagnostika PN přechodů GaAsP luminiscenčních diod Diagnostics of GaAsP Light Emitting Diode PN Junctions
skos:prefLabel
Diagnostika PN přechodů GaAsP luminiscenčních diod Diagnostics of GaAsP Light Emitting Diode PN Junctions Diagnostics of GaAsP Light Emitting Diode PN Junctions
skos:notation
RIV/00216305:26220/03:PU42130!RIV06-GA0-26220___
n3:strany
50-50
n3:aktivita
n10:P n10:Z
n3:aktivity
P(GA102/03/0621), Z(MSM 262200022)
n3:dodaniDat
n6:2006
n3:domaciTvurceVysledku
n14:3502465 n14:9458670
n3:druhVysledku
n13:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
603591
n3:idVysledku
RIV/00216305:26220/03:PU42130
n3:jazykVysledku
n12:eng
n3:klicovaSlova
PN Junction, Microplasma noise, Quality, Avalanche breakdown
n3:klicoveSlovo
n4:Microplasma%20noise n4:PN%20Junction n4:Quality n4:Avalanche%20breakdown
n3:kontrolniKodProRIV
[73CA95311BA7]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Brno
n3:nazevZdroje
Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Abstracts Book
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n17:GA102%2F03%2F0621
n3:rokUplatneniVysledku
n6:2003
n3:tvurceVysledku
Koktavý, Bohumil Koktavý, Pavel
n3:typAkce
n15:WRD
n3:zahajeniAkce
2003-08-15+02:00
n3:zamer
n19:MSM%20262200022
s:numberOfPages
1
n18:hasPublisher
CNRL
n9:organizacniJednotka
26220