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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F03%3APU39331%21RIV%2F2004%2FMSM%2F262204%2FN
rdf:type
n5:Vysledek skos:Concept
dcterms:description
Two theoretical methods, the effective mass approximation and the tight binding method, that can be used for nanoscale MOSFETs modeling are briefly described, Both methods can be implemented on a PC computer and both give satisfactory results. Two theoretical methods, the effective mass approximation and the tight binding method, that can be used for nanoscale MOSFETs modeling are briefly described, Both methods can be implemented on a PC computer and both give satisfactory results.
dcterms:title
Towards nanometer scale MOSFETs Towards nanometer scale MOSFETs
skos:prefLabel
Towards nanometer scale MOSFETs Towards nanometer scale MOSFETs
skos:notation
RIV/00216305:26220/03:PU39331!RIV/2004/MSM/262204/N
n3:strany
159-164
n3:aktivita
n11:Z
n3:aktivity
Z(MSM 262200022)
n3:dodaniDat
n9:2004
n3:domaciTvurceVysledku
n13:8391408
n3:druhVysledku
n20:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
631203
n3:idVysledku
RIV/00216305:26220/03:PU39331
n3:jazykVysledku
n4:eng
n3:klicovaSlova
nanoscale MOSFET, effective mass, tight binding method
n3:klicoveSlovo
n7:effective%20mass n7:nanoscale%20MOSFET n7:tight%20binding%20method
n3:kontrolniKodProRIV
[317EA51E22E0]
n3:mistoKonaniAkce
Technological Institute of Crete, Chania, Greece
n3:mistoVydani
Chania, Greece
n3:nazevZdroje
Proceedings od the Socrates Workshop 2003. Intensive Training Programme in Electronic System Design.
n3:obor
n18:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
1
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:rokUplatneniVysledku
n9:2003
n3:tvurceVysledku
Horák, Michal
n3:typAkce
n8:EUR
n3:zahajeniAkce
2003-09-22+02:00
n3:zamer
n14:MSM%20262200022
s:numberOfPages
6
n19:hasPublisher
Technological Institute of Crete, Chania, Greece
n16:isbn
80-214-2461-3
n21:organizacniJednotka
26220