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Namespace Prefixes

PrefixIRI
n18http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n11http://purl.org/net/nknouf/ns/bibtex#
n6http://localhost/temp/predkladatel/
n12http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n8http://linked.opendata.cz/resource/domain/vavai/projekt/
n17http://linked.opendata.cz/ontology/domain/vavai/
n22http://linked.opendata.cz/resource/domain/vavai/zamer/
n14https://schema.org/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n21http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F03%3APU39256%21RIV06-GA0-26220___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n5http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n19http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n15http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F03%3APU39256%21RIV06-GA0-26220___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
V předloženém článku jsou popsány charakteristiky náhodného impulzního procesu, který vzniká v důsledku bistabilní podstaty vedení proudu mikroplazmami v PN přechodech luminiscenčních diod. Experimenty ukazují, že bistabilní chování mikroplazmy je možné popsat jako dvoustavový proces generace - rekombinace. Characteristics of an impulse random process which arises in consequence of the bi-stable nature of the microplasma conductivity in GaAsP light emitting diode p-n junctions are dealt with in the present paper. Experiments show that the microplasma bi-stable behaviour may be described as a two-state stochastic process of a generation-recombination type (G-R process), which is Markovian, provided that the diode is operated in low-impedance load conditions. Theoretical solution of the model has been carrieed out, from which statistical characteristics of the process have subsequently been derived. Based on the theoretical analysis results, a methodology to be applied to the above-mentioned characteristic evaluation has been worked out. Experimental study of these characteristics has followed. The theoretical analysis shows that the process characteristics depend on the g and r parameters. The quantities g and r are the respective generation and recombination coefficients (turn-on probability p01 and turn Characteristics of an impulse random process which arises in consequence of the bi-stable nature of the microplasma conductivity in GaAsP light emitting diode p-n junctions are dealt with in the present paper. Experiments show that the microplasma bi-stable behaviour may be described as a two-state stochastic process of a generation-recombination type (G-R process), which is Markovian, provided that the diode is operated in low-impedance load conditions. Theoretical solution of the model has been carrieed out, from which statistical characteristics of the process have subsequently been derived. Based on the theoretical analysis results, a methodology to be applied to the above-mentioned characteristic evaluation has been worked out. Experimental study of these characteristics has followed. The theoretical analysis shows that the process characteristics depend on the g and r parameters. The quantities g and r are the respective generation and recombination coefficients (turn-on probability p01 and turn
dcterms:title
Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes Studium statistických charakteristik šumu mikroplazmy v GaAsP diodách
skos:prefLabel
Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes Studium statistických charakteristik šumu mikroplazmy v GaAsP diodách
skos:notation
RIV/00216305:26220/03:PU39256!RIV06-GA0-26220___
n3:strany
437-440
n3:aktivita
n7:P n7:Z
n3:aktivity
P(GA102/03/0621), Z(MSM 262200022)
n3:dodaniDat
n15:2006
n3:domaciTvurceVysledku
n12:3502465
n3:druhVysledku
n20:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
629571
n3:idVysledku
RIV/00216305:26220/03:PU39256
n3:jazykVysledku
n19:eng
n3:klicovaSlova
Microplasma noise, Generation-recombination process, PN junction, Avalanche
n3:klicoveSlovo
n5:Avalanche n5:Microplasma%20noise n5:PN%20junction n5:Generation-recombination%20process
n3:kontrolniKodProRIV
[FFBB3F501B9D]
n3:mistoKonaniAkce
Prague
n3:mistoVydani
Prague
n3:nazevZdroje
Proceedings of the 17th International Conference Noise and Fluctuation ICNF 2003
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
1
n3:projekt
n8:GA102%2F03%2F0621
n3:rokUplatneniVysledku
n15:2003
n3:tvurceVysledku
Koktavý, Pavel
n3:typAkce
n18:WRD
n3:zahajeniAkce
2003-08-18+02:00
n3:zamer
n22:MSM%20262200022
s:numberOfPages
4
n11:hasPublisher
CNRL, s.r.o.
n14:isbn
80-239-1055-1
n6:organizacniJednotka
26220