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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F03%3APU39254%21RIV06-GA0-26220___
rdf:type
skos:Concept n21:Vysledek
dcterms:description
In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation - recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocity has the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge car rier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee will derive the c V tomto článku je podán prostředek pro statistický popis procesu nárazové ionizace v GaAs0.6P0.4 PN přechodech v silných elektrických polích pomocí modelu založeném na Markovském procesu typu generace - rekombinace. In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation - recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocity has the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge car rier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee will derive the c
dcterms:title
Statistics of Impact Ionization Processes in GaAsP P-N Junctions Statistické charakteristiky procesu nárazové ionizace v GaAsP PN přechodech Statistics of Impact Ionization Processes in GaAsP P-N Junctions
skos:prefLabel
Statistické charakteristiky procesu nárazové ionizace v GaAsP PN přechodech Statistics of Impact Ionization Processes in GaAsP P-N Junctions Statistics of Impact Ionization Processes in GaAsP P-N Junctions
skos:notation
RIV/00216305:26220/03:PU39254!RIV06-GA0-26220___
n4:strany
441-444
n4:aktivita
n5:P n5:Z
n4:aktivity
P(GA102/03/0621), Z(MSM 262200022)
n4:dodaniDat
n12:2006
n4:domaciTvurceVysledku
n17:3502465
n4:druhVysledku
n10:D
n4:duvernostUdaju
n18:S
n4:entitaPredkladatele
n19:predkladatel
n4:idSjednocenehoVysledku
628794
n4:idVysledku
RIV/00216305:26220/03:PU39254
n4:jazykVysledku
n8:eng
n4:klicovaSlova
Microplasma noise, Impulse noise, GaAsP, PN junction, Generation-recombination process
n4:klicoveSlovo
n6:PN%20junction n6:GaAsP n6:Generation-recombination%20process n6:Microplasma%20noise n6:Impulse%20noise
n4:kontrolniKodProRIV
[3C20DF860CC3]
n4:mistoKonaniAkce
Prague
n4:mistoVydani
Prague
n4:nazevZdroje
Proceedings of the 17th International Conference %22Noise and Fluctuation%22 ICNF 2003
n4:obor
n22:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
1
n4:projekt
n15:GA102%2F03%2F0621
n4:rokUplatneniVysledku
n12:2003
n4:tvurceVysledku
Koktavý, Pavel
n4:typAkce
n9:WRD
n4:zahajeniAkce
2003-08-18+02:00
n4:zamer
n11:MSM%20262200022
s:numberOfPages
4
n3:hasPublisher
CNRL, s.r.o.
n14:isbn
80-239-1055-1
n16:organizacniJednotka
26220