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Namespace Prefixes

PrefixIRI
n17http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n20http://purl.org/net/nknouf/ns/bibtex#
n13http://localhost/temp/predkladatel/
n8http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n19http://linked.opendata.cz/ontology/domain/vavai/
n11http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n15http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F02%3APU52212%21RIV06-MSM-26220___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n9http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n5http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F02%3APU52212%21RIV06-MSM-26220___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.
dcterms:title
Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport
skos:prefLabel
Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport
skos:notation
RIV/00216305:26220/02:PU52212!RIV06-MSM-26220___
n3:strany
132-135
n3:aktivita
n18:Z
n3:aktivity
Z(MSM 262200022)
n3:dodaniDat
n5:2006
n3:domaciTvurceVysledku
n8:7526938
n3:druhVysledku
n7:D
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
644777
n3:idVysledku
RIV/00216305:26220/02:PU52212
n3:jazykVysledku
n6:eng
n3:klicovaSlova
GaN, scattering, mobility
n3:klicoveSlovo
n9:mobility n9:GaN n9:scattering
n3:kontrolniKodProRIV
[28A067E49979]
n3:mistoKonaniAkce
Meisei University, Tokyo, Japan
n3:mistoVydani
Tokio
n3:nazevZdroje
Proceedings of the 13th Symposium on Advanced Materials
n3:obor
n14:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
7
n3:rokUplatneniVysledku
n5:2002
n3:tvurceVysledku
Pavelka, Jan Tanuma, Nobuhisa Yamada, M. Tacano, Munecazu Tanoue, H. Tanizaki, H. Tomisawa, K.
n3:typAkce
n17:WRD
n3:zahajeniAkce
2002-11-16+01:00
n3:zamer
n11:MSM%20262200022
s:numberOfPages
4
n20:hasPublisher
Meisei Univeristy
n13:organizacniJednotka
26220