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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F02%3APU30677%21RIV%2F2003%2FMSM%2F262203%2FN
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Random two-level or multiple-level current impulses may occur in electronic devices containing reverse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, featuring constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hass been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability density w(t0) of the impulse separation t0 and the probability density w(t1) of the impulse width t1 have exponential courses. The power spectral density of the noise current is of a G-R process type and depends on the particular microplasma properties. From the viewpoint of noise diagnostics, the most important features are the s Random two-level or multiple-level current impulses may occur in electronic devices containing reverse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, featuring constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hass been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability density w(t0) of the impulse separation t0 and the probability density w(t1) of the impulse width t1 have exponential courses. The power spectral density of the noise current is of a G-R process type and depends on the particular microplasma properties. From the viewpoint of noise diagnostics, the most important features are the s
dcterms:title
Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas
skos:prefLabel
Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas
skos:notation
RIV/00216305:26220/02:PU30677!RIV/2003/MSM/262203/N
n3:strany
65-70
n3:aktivita
n4:Z
n3:aktivity
Z(MSM 262200022)
n3:cisloPeriodika
2
n3:dodaniDat
n6:2003
n3:domaciTvurceVysledku
n8:9770690 n8:3502465
n3:druhVysledku
n16:J
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
662336
n3:idVysledku
RIV/00216305:26220/02:PU30677
n3:jazykVysledku
n13:eng
n3:klicovaSlova
Microplasma noise, Local avalanche breakdown, LED diodes, Reliability
n3:klicoveSlovo
n10:Reliability n10:Local%20avalanche%20breakdown n10:Microplasma%20noise n10:LED%20diodes
n3:kodStatuVydavatele
SG - Singapurská republika
n3:kontrolniKodProRIV
[E9277CC0EF16]
n3:nazevZdroje
Fluctuation and Noise Letters
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:rokUplatneniVysledku
n6:2002
n3:svazekPeriodika
2
n3:tvurceVysledku
Koktavý, Pavel Šikula, Josef
n3:zamer
n11:MSM%20262200022
s:issn
0219-4775
s:numberOfPages
6
n18:organizacniJednotka
26220