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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F02%3APU29889%21RIV%2F2003%2FMSM%2F262203%2FN
rdf:type
skos:Concept n16:Vysledek
dcterms:description
This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a %22modulation depth%22%22 of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4. This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a %22modulation depth%22%22 of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.
dcterms:title
Residual Reflectivity of Amplification Media for Extended-Cavity Laser Residual Reflectivity of Amplification Media for Extended-Cavity Laser
skos:prefLabel
Residual Reflectivity of Amplification Media for Extended-Cavity Laser Residual Reflectivity of Amplification Media for Extended-Cavity Laser
skos:notation
RIV/00216305:26220/02:PU29889!RIV/2003/MSM/262203/N
n3:strany
352-356
n3:aktivita
n20:Z
n3:aktivity
Z(MSM 262200011), Z(MSM 262200022)
n3:dodaniDat
n21:2003
n3:domaciTvurceVysledku
n4:4285271 n4:5218497
n3:druhVysledku
n12:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n8:predkladatel
n3:idSjednocenehoVysledku
662207
n3:idVysledku
RIV/00216305:26220/02:PU29889
n3:jazykVysledku
n13:eng
n3:klicovaSlova
semiconductor laser, laser chip, antireflection coating
n3:klicoveSlovo
n11:semiconductor%20laser n11:laser%20chip n11:antireflection%20coating
n3:kontrolniKodProRIV
[2A804FE73B1B]
n3:mistoKonaniAkce
Novosibirsk
n3:mistoVydani
Washington, USA
n3:nazevZdroje
Seveth International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life
n3:obor
n17:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:rokUplatneniVysledku
n21:2002
n3:tvurceVysledku
Růžička, Bohdan Wilfert, Otakar
n3:typAkce
n15:WRD
n3:zahajeniAkce
2002-09-09+02:00
n3:zamer
n14:MSM%20262200022 n14:MSM%20262200011
s:numberOfPages
5
n5:hasPublisher
SPIE-The International Society for Optical Engineering
n18:isbn
0-8194-4686-6
n10:organizacniJednotka
26220