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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F02%3APU29105%21RIV%2F2003%2FMSM%2F262203%2FN
rdf:type
skos:Concept n11:Vysledek
dcterms:description
Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed. Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.
dcterms:title
Local measurement of optically induced photocurrent in semiconductor structures Local measurement of optically induced photocurrent in semiconductor structures
skos:prefLabel
Local measurement of optically induced photocurrent in semiconductor structures Local measurement of optically induced photocurrent in semiconductor structures
skos:notation
RIV/00216305:26220/02:PU29105!RIV/2003/MSM/262203/N
n3:strany
630-634
n3:aktivita
n12:P n12:Z
n3:aktivity
P(LA 031), P(OC 523.40), Z(MSM 262200022)
n3:cisloPeriodika
4096
n3:dodaniDat
n6:2003
n3:domaciTvurceVysledku
n4:1824554 n4:6001041 n4:9090584 n4:6493645
n3:druhVysledku
n7:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
651986
n3:idVysledku
RIV/00216305:26220/02:PU29105
n3:jazykVysledku
n19:eng
n3:klicovaSlova
locally induced photocurrent, scanning near-field optical microscopy, super-resolution, AlGaAs/GaAs, Fabry-Perot effect
n3:klicoveSlovo
n10:scanning%20near-field%20optical%20microscopy n10:AlGaAs%2FGaAs n10:Fabry-Perot%20effect n10:super-resolution n10:locally%20induced%20photocurrent
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[10A93AFF3E14]
n3:nazevZdroje
Proceedings of SPIE
n3:obor
n18:BH
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n5:LA%20031 n5:OC%20523.40
n3:rokUplatneniVysledku
n6:2002
n3:svazekPeriodika
4096
n3:tvurceVysledku
Uhdeová, Naděžda Dobis, Pavel Tománek, Pavel Dobisová, Markéta
n3:zamer
n14:MSM%20262200022
s:issn
0277-786X
s:numberOfPages
5
n17:organizacniJednotka
26220